| PART |
Description |
Maker |
| MJE13005-TA3-T MJE13005-TF3-T MJE13005-TQ3-T |
NPN SILICON POWER TRANSISTORS 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-263AB
|
Unisonic Technologies Co., Ltd.
UNISONIC TECHNOLOGIES CO LTD
|
| KS621240 |
Single Darlington Transistor Module 400 Amperes/1200 Volts 400 A, 1200 V, NPN, Si, POWER TRANSISTOR
|
Powerex, Inc.
Powerex Power Semiconductors
|
| BUL381D_03 BUL381D03 BUL381D |
5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
| MJ13333_D ON1977 MJ13333 |
20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400-500 VOLTS 175 WATTS
From old datasheet system
20 AMPERE NPN SILICON POWER TRANSISTORS 400-500 VOLTS 175 WATTS
|
ON Semiconductor
Motorola, Inc
|
| BUJD103AD |
NPN power transistor with integrated diode 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-252
|
NXP Semiconductors N.V.
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| BUV47 |
9 A, 400 V, NPN, Si, POWER TRANSISTOR
|
BOURNS INC
|
| CZTA44LEADFREE |
0.3 A, 400 V, NPN, Si, POWER TRANSISTOR
|
CENTRAL SEMICONDUCTOR CORP
|
| BUW11AW BUW11W |
Silicon diffused power transistors 5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-247
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| QM400HA-H |
400 A, 3 CHANNEL, NPN, Si, POWER TRANSISTOR
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
|
