| PART |
Description |
Maker |
| IXBH6N170 IXBT6N170 |
High Voltage, High Gain BIMOSFET?/a> Monolithic Bipolar MOS Transistor
High Voltage, High Gain BIMOSFET⑩ Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBH16N170A IXBT16N170A |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS[IXYS Corporation]
|
| IXBH12N300 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| ECN30601SP ECN30601SPR ECN30601SPV ECN30601 |
HIGH-VOLTAGE MONOLITHIC IC 高压单片集成电路
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| TPD4113K |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| A2460 |
Monolithic High Voltage MOSFET and IGBT Driver
|
Alpha Microelectronics
|
| LS301-14 |
HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS
|
Linear Integrated Syste...
|
| NCP1050 NCP1050PZZZ NCP1050STZZZT3 NCP1051 NCP1051 |
Monolithic High Voltage Gated Oscillator Power Switching Regulator
|
ONSEMI[ON Semiconductor]
|
| NCP1052ST136T3G NCP1052 NCP1053 NCP1055 NCP1054 NC |
Monolithic High Voltage Gated Oscillator Power Switching Regulator
|
ONSEMI[ON Semiconductor]
|
