PART |
Description |
Maker |
MCM63R918FC3.3R MCM63R918FC3.7R MCM63R836FC3.7R |
512K X 18 LATE-WRITE SRAM, 1.65 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119 512K X 18 LATE-WRITE SRAM, 1.85 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119 256K X 36 LATE-WRITE SRAM, 1.85 ns, PBGA119
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Motorola Mobility Holdings, Inc. MOTOROLA INC
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GS815018AB-250 GS815018AGB-250 GS815036AB-250 GS81 |
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 2 ns, PBGA119 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 512K X 36 LATE-WRITE SRAM, 2 ns, PBGA119 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 1.4 ns, PBGA119 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 1.5 ns, PBGA119 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 1.6 ns, PBGA119 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 512K X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 512K X 36 LATE-WRITE SRAM, 1.5 ns, PBGA119 512K X 36 LATE-WRITE SRAM, 1.4 ns, PBGA119
|
GSI Technology, Inc.
|
GS815018AB-300 GS815018AB-333 GS815018AB-357 GS815 |
1M x 18/ 512K x 36 18Mb Register-Register Late Write SRAM
|
GSI Technology
|
GS815018AGB-357 GS815018AB-357 GS815018AB-357I GS8 |
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM
|
GSI[GSI Technology]
|
K7P321874C K7P323674C K7P323674C-HC300 |
1Mx36 & 2Mx18 SRAM 1M X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119
|
Samsung semiconductor
|
GS8330DW36 GS8330DW72 |
(GS8330DW36/72) 36M Double Late Write SRAM
|
GSI Technology
|
CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes 18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
A65H73361P-7 A65H73361P-6 A65H83181P-6 A65H83181P- |
128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output
|
AMIC Technology Corporation
|
MCM69R736A MCM69R736AZP5 MCM69R736AZP5R MCM69R736A |
4M LATE WRITE HSTL
|
MOTOROLA[Motorola Inc] Motorola, Inc
|
MCM63L836A |
8M Late Write HSTL From old datasheet system
|
Motorola
|
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