| PART |
Description |
Maker |
| IDT71V633S11PF IDT71V633S11PFI IDT71V633S12PFI IDT |
From old datasheet system
64K x 32 3.3V Synchronous SRAM Flow-Through Outputs Burst Counter, Single Cycle Deselect
3.3V 64K x 32 Static SRAM with Flow-Through Outputs
|
IDT[Integrated Device Technology]
|
| CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72）流体系结构，通过与总线延迟（带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72）流的SRAM
|
Cypress Semiconductor Corp.
|
| IDT71V633 IDT71V633S11PF IDT71V633S11PFI |
64K x 32 3.3V Synchronous SRAM Flow-Through Outputs Burst Counter, Single Cycle Deselect 64K X 32 CACHE SRAM, 11 ns, PQFP100
|
Integrated Device Technology, Inc.
|
| CY7C1379B-117AC CY7C1379B-117BZC CY7C1379B |
9-Mbit (256K x 32) Flow-through SRAM with NoBL(TM) Architecture
9-Mbit (256K x 32) Flow-through SRAM with NoBL⑩ Architecture
9-Mbit (256K x 32) Flow-through SRAM with NoBL垄芒 Architecture
9-Mbit (256K x 32) Flow-through SRAM with NoBL Architecture
|
Cypress Semiconductor
|
| MCM69F618CTQ12 MCM69F618CTQ12R MCM69F618CTQ10 MCM6 |
64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM 64K X 18 CACHE SRAM, 12 ns, PQFP100
64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM 64K X 18 CACHE SRAM, 9 ns, PQFP100
|
MOTOROLA[Motorola, Inc]
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| CY7C1373D-133AXC CY7C1373D ICY7C1373D-100BGXI CY7C |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL(TM) Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture
|
CYPRESS[Cypress Semiconductor]
|
| MT58L64L32FT-6.8 MT58L64L36FT-6.8 MT58L64V32FT-6.8 |
2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM 2MB的：128K的1864K的x 32/36流通过SYNCBURST的SRAM
2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM 2MB的：128K的184K的x 32/36流通过SYNCBURST的SRAM
|
Micron Technology, Inc.
|
| CY7C1353G-133AXC CY7C1353G-133AXI CY7C1353G-117AXI |
4-Mbit (256K x 18) Flow-through SRAM with NoBL(TM) Architecture
4-Mbit (256K x 18) Flow-through SRAM with NoBL⑩ Architecture
4-Mbit (256K x 18) Flow-through SRAM with NoBL Architecture
|
CYPRESS[Cypress Semiconductor]
|
| MT58L128L18FT-10 MT58L128L18FT-7.5 MT58L128V18F MT |
2MB: 128K X 18, 64K X 32/36 FLOW-THROUGH SYNCBURST SRAM
|
MICRON[Micron Technology]
|
| IS61LF6436A-8.5TQI IS61LF6436A IS61LF6432A-8.5TQLI |
64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| CY7C1483V25-100BZC CY7C1483V25-100BZXC CY7C1483V25 |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM 1M X 72 CACHE SRAM, 8.5 ns, PBGA209
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM 1M X 72 CACHE SRAM, 6.5 ns, PBGA209
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM 4M X 18 CACHE SRAM, 6.5 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM 4M X 18 CACHE SRAM, 8.5 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
