| PART |
Description |
Maker |
| BAT19-ARX |
SILICON, UHF BAND, MIXER DIODE, DO-35
|
STMICROELECTRONICS
|
| 933912210215 |
SILICON, UHF BAND, MIXER DIODE
|
NXP SEMICONDUCTORS
|
| BAT68-04 BAT68-04W BAT68-06 BAT68-06W BAT68-07W |
SILICON, VHF-UHF BAND, MIXER DIODE
Silicon Schottky Diodes
|
Infineon Technologies AG
|
| BA128210 BA1283-TR3 |
Band Switching Diodes
DIODE SILICON, VHF BAND, MIXER DIODE, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS, MICROMELF-2, Microwave Mixer Diode
|
Vishay Siliconix
Vishay Semiconductors
|
| 1SS29501 1SS295 |
DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE UHF BAND MIXER APPLICATIONS
|
Toshiba Semiconductor
|
| 1SS154 |
Diode Silicon Epitaxial Schottky Barrier Type UHF~S Band Mixer/Detector Applications
|
TOSHIBA
|
| DME2031-225 DMJ2303-221 |
SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SILICON, HIGH BARRIER SCHOTTKY, S BAND, MIXER DIODE
|
SKYWORKS SOLUTIONS INC
|
| DMJ4771-000 DME2029-000 DME2031-000 DME2029-255 DM |
SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE
|
|
| 2SC3862 E000891 |
From old datasheet system
NPN EPITAXIAL PLANAR TYPE (TY TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| ADN9001-91 AMM9001-91 ADN3002-23 ADN3002-51 ADN300 |
SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, KA BAND, MIXER DIODE
|
ADVANCED SEMICONDUCTOR INC
|
| 2SK1228TMG MA3027-LH MA3027TSK MA3150-LTMG MA3360- |
100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2.7 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
0.1 A, SILICON, SIGNAL DIODE
SILICON, PIN DIODE
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
0.035 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
PANASONIC CORP
|
|
