| PART |
Description |
Maker |
| CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| IS61NLF102436A IS61NLF102436A-6.5B3 IS61NLF102436A |
STATE BUS SRAM
1M X 36 ZBT SRAM, 6.5 ns, PBGA165 13 X 15 MM, PLASTIC, BGA-165
1M X 36 ZBT SRAM, 6.5 ns, PQFP100 TQFP-100
2M X 18 ZBT SRAM, 6.5 ns, PBGA165 13 X 15 MM, PLASTIC, BGA-165
2M X 18 ZBT SRAM, 6.5 ns, PQFP100 TQFP-100
|
Integrated Silicon Solution, Inc.
|
| IDT71V3558SA133PFGI IDT71V3558SA100BGG IDT71V3558S |
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O
128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O/ Burst Counter Pipelined Outputs
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PQFP100
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PQFP100
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.3V的I / O的脉冲计数器输出流水
TV 6C 6#12 SKT WALL RECP
Circular Connector; No. of Contacts:41; Series:D38999; Body Material:Metal; Connecting Termination:Crimp; Connector Shell Size:21; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-41
|
IDT
Integrated Device Technology, Inc.
|
| IS61NVP102436-166TQI IS61NVP102436-166TQLI NVP2048 |
1M X 36 ZBT SRAM, 3.5 ns, PQFP100 TQFP-100
1M X 36 ZBT SRAM, 3.5 ns, PQFP100 LEAD FREE, TQFP-100
2M X 18 ZBT SRAM, 3.5 ns, PBGA165
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| MT55L128L32P1 MT55L256V18P1 MT55L256L18P1 MT55L128 |
3.3V I/O28K x 32，Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器)
2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器)
3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18，流量通过ZBT SRAM的电压（3.3V输入/输出Mb的流通式同步静态存储器
3.3V I/O28K x 36，Flow-Through ZBT SRAM(3.3V或输输出,4Mb流通式同步静态存储器) 3.3V的I / O28K的36，流量通过ZBT SRAM的电压（3.3V或输输出Mb的流通式同步静态存储器
2.5V I/O28K x 32，Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 2.5VI / O28K的32，流量通过ZBT SRAM的电压（2.5V输入/输出Mb的流通式同步静态存储器
|
Micron Technology, Inc.
|
| MT55L512V18FF-11 MT55L512V18FF-12 MT55L256L36FT-10 |
512K X 18 ZBT SRAM, 8.5 ns, PBGA165
512K X 18 ZBT SRAM, 9 ns, PBGA165
256K X 36 ZBT SRAM, 7.5 ns, PQFP100
256K X 36 ZBT SRAM, 8.5 ns, PQFP100
256K X 36 ZBT SRAM, 8.5 ns, PBGA165
|
CYPRESS SEMICONDUCTOR CORP
|
| IDT7052S25PQF |
SMD-IC,MEM,SRAM,2KX8 25NS,4PORT,PAR,PQFP 2K X 8 FOUR-PORT SRAM, 25 ns, PQFP132
|
Integrated Device Technology, Inc.
|
| MCM64Z916ZP100R MCM64Z834ZP100R |
512K X 18 ZBT SRAM, 5 ns, PBGA119
256K X 36 ZBT SRAM, 5 ns, PBGA119
|
MOTOROLA INC
|
| IDT71V65803S133BG IDT71V65803S100BQ IDT71V65803S10 |
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 3.8 ns, PQFP100
256K x 36/ 512K x 18 3.3V Synchronous ZBT SRAMs
RECTIFIER FAST-RECOVERY SINGLE 1A 100V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 1K/BULK
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| GS8320Z36T-166V GS8320Z36T-133V GS8320Z36T-166VT G |
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 1M X 36 ZBT SRAM, 7 ns, PQFP100
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 1M X 36 ZBT SRAM, 8.5 ns, PQFP100
1M X 36 ZBT SRAM, 7 ns, PQFP100 TQFP-100
1M X 36 ZBT SRAM, 7 ns, PQFP100 ROHS COMPLIANT, TQFP-100
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 1M X 36 ZBT SRAM, 6.5 ns, PQFP100
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 1M X 36 ZBT SRAM, 5.5 ns, PQFP100
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 1M X 36 ZBT SRAM, 6 ns, PQFP100
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 2M X 18 ZBT SRAM, 7 ns, PQFP100
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 2M X 18 ZBT SRAM, 8.5 ns, PQFP100
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 2M X 18 ZBT SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
Electronic Theatre Controls, Inc.
|
| MT55L256V18F1 MT55L256L18F1 |
2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器)
3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18，流量通过ZBT SRAM的电压（3.3V输入/输出Mb的流通式同步静态存储器
|
Micron Technology, Inc.
|
| CY7C1371C-117BGI CY7C1371C-117BZC CY7C1371C-117BGC |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 7.5 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 7.5 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
|
