| PART |
Description |
Maker |
| TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
| SUD50N04-06H |
MOSFETs
N-Channel 40-V (D-S), 175??MOSFET
N-Channel 40-V (D-S), 175∩ MOSFET
N-Channel 40-V (D-S), 175 MOSFET
|
VISAY[Vishay Siliconix]
|
| SUD50N02-11P |
N-Channel 20-V (D-S) 175C MOSFET
N-Channel 20-V (D-S) 175∩ MOSFET
N-Channel 20-V (D-S) 175隆? MOSFET
N-Channel 20-V (D-S) 175?/a> MOSFET
|
Vishay Siliconix
|
| SUD40N03-18P |
N-Channel 30-V (D-S) 175 MOSFET
N-Channel 30-V (D-S) 175隆? MOSFET
N-Channel 30-V (D-S) 175C MOSFET
N-Channel 30-V (D-S) 175∩ MOSFET
N-Channel 30-V (D-S) MOSFET
|
VISAY[Vishay Siliconix]
|
| UPA1807 UPA1807GR-9JG UPA1807GR-9JG-E1 UPA1807GR-9 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | SO
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
N Channel enhancement MOS FET
|
NEC Corp.
NEC[NEC]
|
| 2SK1399 D14770EJ2V0DS00 2SK1399-L 2SK1399-T2B |
N-channel MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
From old datasheet system
|
NEC[NEC]
|
| BSS192 |
P-channel vertical D-MOS intermediate level FET P沟道垂直 D-MOS 中间级场效应
N-channel TrenchMOS TM transistor
|
NXP Semiconductors N.V.
Philips
|
| 2SK2157 D11233EJ1V0DS00 2SK2157-T1 2SK2157-T2 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING N沟道场效应晶体管的高速开
From old datasheet system
N-channel MOS type field effect transistor
|
NEC, Corp.
NEC[NEC]
|
| UPA650TT UPA650TT-E1 UPA650TT-E2 |
P-channel enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| UPA1872 UPA1872GR-9JG UPA1872GR-9JG-E1 UPA1872GR-9 |
N-channel enhancement type MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC[NEC]
|
| 2SK4178-ZK-E2-AY 2SK4178-ZK-E1-AY 2SK4178-S27-AY 2 |
48000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET MOS场效应晶体管的开关N沟道功率场效应晶体管
|
NEC Corp.
NEC, Corp.
|
