PART |
Description |
Maker |
ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE 40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE 150 V, SILICON, PIN DIODE 27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
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ML4963-138 ML4971-138 ML4941-111 ML4941-118 ML4941 |
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE 50 GHz - 60 GHz, GALLIUM ARSENIDE, GUNN DIODE 27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
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ATF-26884 ATF-26884-STR ATF-26884-TR1 ATF26884 |
2-16 GHz General Purpose Gallium Arsenide FET
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Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
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ATF-13336 ATF-13336-STR ATF-13336-TR1 |
2-16 GHz Low Noise Gallium Arsenide FET
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Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
ATF-44101 |
2-8 GHz Medium Power Gallium Arsenide FET
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Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
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ATF13284 ATF13284STR ATF13284TR1 |
1-16 GHz Low Noise Gallium Arsenide FET
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Agilent(Hewlett-Packard)
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ATF13284TR2 ATF-13284 ATF-13284-STR ATF-13284-TR1 |
1-16 GHz Low Noise Gallium Arsenide FET 1-16 GHz的低噪声砷化镓场效应
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Agilent(Hewlett-Packard... HP[Agilent(Hewlett-Packard)]
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ATF-10736 |
0.512 GHz General Purpose Gallium Arsenide FET
|
Agilent(Hewlett-Packard)
|
ATF-10136 ATF-10136-STR ATF-10136-TR1 ATF10136 |
ER 3C 3#16 PIN RECP BOX 0.5-12 GHz Low Noise Gallium Arsenide FET
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HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
PE82P2000 |
Analog Phase Shifter, 5 GHz to 18 GHz, With an Adjustable Phase of 40 Deg. Per GHz and SMA
|
Pasternack Enterprises,...
|
Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) From old datasheet system
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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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GENE-8315 TF-GENE-8315-A10-01 TF-GENE-8315-A10-02 |
Onboard Intel? ULV Celeron? M 600 MHz/ 1.0 GHz or Intel? Celeron? M 1.3 GHz (Optional)/ 1.5 GHz Processors
|
AAEON Technology
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