| PART |
Description |
Maker |
| 165-05A06L 164-03A06L 165-01A06L 165-06A06L 164-11 |
5 mm Tunable Inductor
Unshielded Surface Mount Inductors UNSHIELDED, 26 uH - 34 uH, VARIABLE INDUCTOR
Unshielded Surface Mount Inductors SHIELDED, 21 uH - 25 uH, VARIABLE INDUCTOR
Unshielded Surface Mount Inductors UNSHIELDED, 54 uH - 78 uH, VARIABLE INDUCTOR
|
Coilcraft lnc.
Coilcraft, Inc.
|
| MAX6720 MAX6720UTD-T MAX6729 MAX6717 MAX6722UTD-T |
Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.313 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.313 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Dual/Triple Ultra-Low-Voltage SOT23 μP Supervisory Circuits
Dual/Triple Ultra-Low-Voltage SOT23 P Supervisory Circuits
Replaced by TPL9201 : Microcontroller Power Supply and Low-Side Driver 20-PDIP -40 to 125
Dual/Triple Ultra-Low-Voltage SOT23 レP Supervisory Circuits 三路、超低电压、SOT23封装、微处理器监控电
8-Bit Shift Register 16-PDIP -40 to 125 三路、超低电压、SOT23封装、微处理器监控电
Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 4.625 V,Vcc2: 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 0.883 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1 4.625 V,Vcc2 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
|
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
Maxim Integrated Produc...
MAXIM - Dallas Semiconductor
|
| 1812R-562J 1812R-184J 1812-181K 1812-561K 1812R-22 |
INDUCTOR UNSHIELDED 5.6UH SMD 1 ELEMENT, 5.6 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR UNSHIELDED 180UH SMD 1 ELEMENT, 180 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
COIL .18UH UNSHIELDED SMD 1 ELEMENT, 0.18 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD
COIL .56UH UNSHIELDED SMD 1 ELEMENT, 0.56 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD
COIL .22UH UNSHIELDED SMD 1 ELEMENT, 0.22 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR UNSHIELDED 470UH SMD 1 ELEMENT, 470 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
API Delevan
|
| TNY379GN-TL TNY375PN TNY376GN |
0.921 A SWITCHING REGULATOR, 280 kHz SWITCHING FREQ-MAX, PDSO7
0.38 A SWITCHING REGULATOR, 280 kHz SWITCHING FREQ-MAX, PDIP7
0.496 A SWITCHING REGULATOR, 280 kHz SWITCHING FREQ-MAX, PDSO7
|
POWER INTEGRATIONS INC
|
| MCP6241 MCP6241-E_LT MCP6241-E_MS MCP6241-E_OT MCP |
MCP6241 operational amplifier (Op Amp) provides wide bandwidth for the quiescent current. MCP6241 has a 650 kHz Gain Bandwidth Product ...
50 uA, 650 kHz Rail-to-Rail Op Amp
|
MICROCHIP[Microchip Technology]
|
| RL895-101K-RC RL895-221K-RC RL895-471K-RC RL895-47 |
Unshielded Surface Mount Inductors 1 ELEMENT, 100 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
Unshielded Surface Mount Inductors 1 ELEMENT, 220 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
Unshielded Surface Mount Inductors 1 ELEMENT, 470 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
Unshielded Surface Mount Inductors 1 ELEMENT, 47000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
Unshielded Surface Mount Inductors 1 ELEMENT, 27000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
Unshielded Surface Mount Inductors 1 ELEMENT, 22000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
|
Bourns, Inc.
|
| FSS913A0R4 FSS913A0D FSS913A0D1 FSS913A0D3 FSS913A |
10A, -100V, 0.280 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs
10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs 10 A, 100 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| STF15N65M5 STP15N65M5 STFI15N65M5 |
N-channel 650 V, 0.308 Ohm, 11 A MDmesh(TM) V Power MOSFET in I2PAKFP package
N-channel 650 V, 0.308 ohm typ., 11 A MDmesh V Power MOSFET
N-channel 650 V, 0.308 Ω typ., 11 A MDmesh V Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages
|
ST Microelectronics
STMicroelectronics
|
| ITM-1602DSTL ITM-1602ATR ITM-1602ATTL ITM-1604ASTL |
(280.90 k) 80.90十一
|
NXP Semiconductors N.V.
|
| STU6N65K3 STF6N65K3 STFI6N65K3 |
N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in I2PAKFP package
N-channel 650 V, 1.1 ohm typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, IPAK
N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in TO-220FP package
|
STMicroelectronics
ST Microelectronics
|
| NCV5171EDR2G NCV5171 |
1.5 A 280 kHz Boost Regulators
|
ONSEMI[ON Semiconductor]
|
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