| PART |
Description |
Maker |
| MV1402-5MCHIP MV1401B-4M MV1405B-2M MV1403-6MCHIP |
360 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
550 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-14
250 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
175 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
100 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
120 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
|
|
| T499 T499_1 |
High Temperature ( 175) Tantalum SMT Capaci
|
KEMET[Kemet Corporation]
|
| SLOTTEN-4-17 SLOTTEN-2-17 SLOTTEN-3-17 SLOTTEN-5-1 |
SHIELDED, 288 uH - 432 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 286 uH - 630 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 230 uH - 310 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 72 uH - 163 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 303 uH - 765 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 66 uH - 136 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 67.2 uH - 100.2 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 52.7 uH - 71.3 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 67.2 uH - 100.8 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 280 uH - 432 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 1.76 uH - 2.64 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 1.2 uH - 1.8 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 2.4 uH - 5.4 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 1.25 uH - 2.75 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 2.9 uH - 3.9 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 18.7 uH - 25.3 uH, VARIABLE INDUCTOR DIP-5
|
Coilcraft, Inc.
|
| BB204B BB204 BB204G |
ER 35C 35#16 PIN PLUG VHF BAND, 14 pF, SILICON, VARIABLE CAPACITANCE DIODE, TO-92
VHF variable capacitance double diodes 甚高频双可变电容二极
|
PHILIPS[Philips Semiconductors]
Philipss
NXP Semiconductors N.V.
|
| 1T362 |
Silicon Variable Capacitance Diode Designed For Electronic Tuning Of TV Tuner(硅可变电容二极管（用于电视调谐器的电子调谐）) 硅变容二极管设计电子调谐电视调谐器（硅可变电容二极管（用于电视调谐器的电子调谐）
Silicon Variable Capacitance Diode
|
Sony, Corp.
Sony Corporation
|
| 1N5448A 1N5465A 1N5467B JAN1N5469B 1N5445C 1N5446C |
22 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
20 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
27 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
18 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
33 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
100 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
|
|
| BB145_2 BB145 BB145T/R BB145115 |
6.9 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE
Low-voltage variable capacitance diode
From old datasheet system
|
NXP Semiconductors
Philipss
|
| MPAT-05840643-4015 MPAT-06400720-4015 MPAT-0750085 |
5845 MHz - 6430 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
6400 MHz - 7200 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
7500 MHz - 8500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.8 dB INSERTION LOSS-MAX
10700 MHz - 12500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
7250 MHz - 7750 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
12750 MHz - 13250 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
17300 MHz - 18100 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX
1500 MHz - 1800 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.1 dB INSERTION LOSS-MAX
950 MHz - 1750 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.2 dB INSERTION LOSS-MAX
1275 MHz - 1480 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
|
MITEQ, Inc.
|
| BBY40 BBY40_1 BBY40/T1 BBY40-T BBY40-15 BBY40-2015 |
VHF BAND, 26 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
From old datasheet system
VHF variable capacitance diode(VHF 可变电容二极
HI-SPEED AT2- USB 2.0 TO ATA/ATAPI BRIDGE
|
NXP Semiconductors
Philips Semiconductors
Philipss
Quanzhou Jinmei Electro...
|
| MA2S367 |
Silicon epitaxial planar type VHF-UHF BAND, 13.25 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
PANASONIC[Panasonic Semiconductor]
|
| MA2B27QB MA2B027 MA2B0270A MA2B0270B MA2B027B MA2B |
Silicon epitaxial planar type variable resistor SILICON, PIN DIODE, DO-35
CANKPT02E16-26SX
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
|
