| PART |
Description |
Maker |
| HY5DU56422DTP HY5DU56822DTP HY5DU56822DTP-J HY5DU5 |
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HY5PS121621CFP-C4I HY5PS12821CFP-C4I HY5PS121621CF |
512Mb DDR2 SDRAM
32M X 16 DDR DRAM, 0.45 ns, PBGA84
128M X 4 DDR DRAM, 0.45 ns, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
| V59C1256804QALP19E V59C1256808QALP19E V59C1G01164Q |
32M X 8 DDR DRAM, BGA68
64M X 16 DDR DRAM, BGA92
|
PROMOS TECHNOLOGIES INC
|
| K4H1G0438A-UCB30 K4H1G0838A-UCB00 |
256M X 4 DDR DRAM, 0.7 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66
128M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Cypress Semiconductor, Corp.
|
| KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61
16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| V58C2512164SBI5 V58C2512804SBJ5 V58C2512804SBLE5 |
32M X 16 DDR DRAM, 0.7 ns, PDSO66
64M X 8 DDR DRAM, 0.7 ns, PBGA60
64M X 8 DDR DRAM, 0.7 ns, PDSO66
|
PROMOS TECHNOLOGIES INC
|
| MT41J1G4THD-187ED MT41J1G4THU-187A MT41J1G4THU-15A |
1G X 4 DDR DRAM, PBGA78
1G X 4 DDR DRAM, PBGA82
|
|
| HY5DU561622DTP HY5DU561622DLTP HY5DU561622DLTP-K H |
DDR SDRAM - 256Mb
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)
|
HYNIX[Hynix Semiconductor]
|
| HMT112U6AFP8C-G7 HMT112U6AFP8C-G8 HMT112U6AFP8C-H8 |
240pin DDR3 SDRAM Unbuffered DIMMs
64M X 64 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204
128M X 72 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204
256M X 64 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204
256M X 72 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204
128M X 72 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240
128M X 64 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240
256M X 64 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240
256M X 72 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| IMSH4GP23A1F1C-08E IMHH4GP23A1F1C-08E IMSH2GP13A1F |
512M X 72 DDR DRAM MODULE, DMA240 GREEN, DIMM-240
256M X 72 DDR DRAM MODULE, DMA240
|
Qimonda AG
|
|
