| PART |
Description |
Maker |
| 2SK2006-4072 |
5 A, 900 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| 2SK2700 |
3 A, 900 V, 4.3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| 2SK1943-01 |
OSC 5V 8PIN CMOS 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel MOS-FET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| IPW90R340C3 |
15 A, 900 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
INFINEON TECHNOLOGIES AG
|
| IRFBF20PBF |
1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY SILICONIX
|
| STW6NC90Z |
5.2 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
STMICROELECTRONICS
|
| J174 J176 J177 J175 |
P-channel silicon field-effect transistors
RESISTOR SILICONE 900 OHM 5W
|
Philips Semiconductors / NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| FQA9N90 |
900V N-Channel MOSFET 8.6 A, 900 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| APT64GA90LD30 |
Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; 117 A, 900 V, N-CHANNEL IGBT, TO-264AA
|
Microsemi, Corp.
|
| IRFPF40 IRFPF40PBF SIHFPF40 SIHFPF40-E3 IRFPF40-20 |
4.7 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 ROHS COMPLIANT PACKAGE-3
Power MOSFET
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| APT10090BFLL APT10090SFLL |
POWER MOS 7 1000V 12A 0.900 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
|
|
