| PART |
Description |
Maker |
| DIM800DDM17-A000 |
Dual Switch IGBT Module 800 A, 1700 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
|
| FGL60N170DTU |
60 A, 1700 V, N-CHANNEL IGBT, TO-264AA
|
FAIRCHILD SEMICONDUCTOR CORP
|
| FF450R17ME4 |
600 A, 1700 V, N-CHANNEL IGBT
|
INFINEON TECHNOLOGIES AG
|
| CM1200HA-34H |
1200 A, 1700 V, N-CHANNEL IGBT
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| CM600E2Y-34H |
HIGH POWER SWITCHING USE INSULATED TYPE 600 A, 1700 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| NTZD3154N NTZD3154NT5G NTZD3154NT1G |
Small Signal MOSFET 20 V, 540 mA, Dual N?Channel
SMALL SIGNAL MOSFET 20 V, 540 MA, DUAL N−CHANNEL
|
ONSEMI
ON Semiconductor
|
| DMC2004DWK DMC2004DWK-7 DMC2004DWK-15 |
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
540 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes Incorporated
Diodes Inc.
|
| CM1000DUC-34SA |
Mega Power Dual IGBT 1000 Amperes/1700 Volts
|
Powerex Power Semiconductors
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| VIO50-06P1 VII50-06P1 VDI50-06P1 VID50-06P1 |
CONN/6 POS HDR SHRD SGL RA LK 42.5 A, 600 V, N-CHANNEL IGBT
IGBT Modules in ECO-PAC 2 42.5 A, 600 V, N-CHANNEL IGBT
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
