| PART |
Description |
Maker |
| IDT70T659S8BF IDT70T659S8BC IDT70T659S8BFI IDT70T6 |
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 10ns
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 8ns
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 15ns
JFET-Input Operational Amplifier 14-SOIC -40 to 85 256K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 10 ns, PQFP208
JFET-Input Operational Amplifier 14-SOIC 0 to 70 高.5V56/128K.3V 5011 2.5V的接口36 ASYNCHRONO美国双端口静RAM
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA256
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA208
JFET-Input Operational Amplifier 14-SOIC 0 to 70 128K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 12ns
|
Integrated Device Techn...
Integrated Device Technology, Inc.
IDT
|
| M21L216128A M21L216128A-10J M21L216128A-10T M21L21 |
128 K x 16 SRAM HIGH SPEED CMOS SRAM
|
List of Unclassifed Manufacturers
ETC
|
| ACT-PS512K8W-012L2I ACT-PS512K8Y-017L2T ACT-PS512K |
High speed 4 Megabit plastic monolithic SRAM. Options burn-in. Speed 12ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 17ns.
High speed 4 Megabit plastic monolithic SRAM. Options none. Speed 10ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle. Speed 15ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 25ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 20ns.
|
Aeroflex Circuit Technology
|
| IC61LV12816 IC61LV12816-8TI IC61LV12816-10B IC61LV |
128K x 16 Hight Speed SRAM with 3.3V 128K的16 Hight高速SRAM.3V
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
|
Toshiba, Corp.
Linear Technology, Corp.
Electronic Theatre Controls, Inc.
ICSI[Integrated Circuit Solution Inc]
|
| IC61LV6416 IC61LV6416-8TI IC61LV6416-10B IC61LV641 |
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
RES,78.7,1/8W,1%,FXD,SMT,THKF,1206
64K x 16 Hight Speed SRAM with 3.3V 64K的16 Hight高速SRAM.3V
|
ICSI[Integrated Circuit Solution Inc]
Ecliptek, Corp.
|
| R1RP0404DGE-2PR R1RP0404D R1RP0404DGE-2LR |
Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (1-Mword 】 4-bit)
4M High Speed SRAM (1-Mword × 4-bit)
|
RENESAS[Renesas Electronics Corporation]
|
| R1RP0416DSB-2PR R1RP0416D R1RP0416DGE-2LR R1RP0416 |
Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (256-kword X 16-bit)
From old datasheet system
|
http://
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| BAS70-T1 Q62702A1173 BAS70T1 BAS70 Q62702A674 |
128 x 128 pixel format, LED or EL Backlight available
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| P4C422-25DC P4C422-25DMB P4C422-12FC P4C422-15FC P |
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 12 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 15 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 35 ns, PDSO24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 25 ns, PDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 25 ns, CDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, PDSO24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, CDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 高速静56 × 4 CMOS存储
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| IDT70825L20G IDT70825L35G IDT70825L45G IDT70825S45 |
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?
Cabinet Rack Front Panel RoHS Compliant: Yes 8K X 16 STANDARD SRAM, 20 ns, PQFP80
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 8K X 16 STANDARD SRAM, 45 ns, CPGA84
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 8K X 16 STANDARD SRAM, 35 ns, PQFP80
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 8K X 16 STANDARD SRAM, 45 ns, PQFP80
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 8K X 16 STANDARD SRAM, 20 ns, CPGA84
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM)
|
SRAM
Integrated Device Technology, Inc.
|
| R1RP0408DGE-2PI R1RP0408DI |
Memory>Fast SRAM>Asynchronous SRAM
Wide Temperature Range Version 4M High Speed SRAM (512-kword 】 8-bit)
Wide Temperature Range Version 4M High Speed SRAM (512-kword × 8-bit)
|
Renesas Electronics Corporation
|
| AS5LC512K8DJ-12L/IT AS5LC512K8F-12L/IT AS5LC512K8E |
512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT
|
Austin Semiconductor, Inc
|
