| PART |
Description |
Maker |
| CY7C1529JV18-250BZXC CY7C1529JV18-250BZXI CY7C1529 |
8M X 9 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1429JV18-250BZC CY7C1429JV18-250BZI CY7C1429JV |
4M X 9 DDR SRAM, 0.45 ns, PBGA165
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1566V1808 CY7C1566V18-400BZC CY7C1566V18-400BZ |
4M X 18 DDR SRAM, 0.45 ns, PBGA165 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor, Corp.
|
| GS8662T18GE-267 |
72Mb SigmaCIO DDR-II Burst of 2 SRAM 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
GSI Technology, Inc.
|
| HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| CAT64LC10ZJ CAT64LC10ZP CAT64LC10J-TE7 CAT64LC10J- |
18-Mbit QDR™-II SRAM 4-Word Burst Architecture
18-Mbit DDR-II SRAM 2-Word Burst Architecture
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
4-Mbit (256K x 18) Flow-Through Sync SRAM SPI串行EEPROM
SPI Serial EEPROM SPI串行EEPROM
|
Analog Devices, Inc.
|
| IS61DDB22M36-250M3 IS61DDB22M36-250M3L IS61DDB22M3 |
72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
2M X 36 DDR SRAM, 0.35 ns, PBGA165
|
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
|
| CY7C1170V18-300BZXI CY7C1170V18-300BZC CY7C1170V18 |
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 DDR SRAM, 0.45 ns, PBGA165
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 512K X 36 DDR SRAM, 0.45 ns, PBGA165
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 DDR SRAM, 0.45 ns, PBGA165
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1523AV18-200BZI CY7C1523AV18-300BZI CY7C1524AV |
72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 4M X 18 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 2M X 36 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 4M X 18 DDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1429AV18 CY7C1422AV18 |
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture(2字Burst结构36-Mbit DDR-II SIO SRAM) 36兆位的DDR - II二氧化硅的SRAM 2字突发架构（2字突发结36 -兆位的DDR - II二氧化硅的SRAM
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture(2字Burst结构6-Mbit DDR-II SIO SRAM) 36兆位的DDR - II二氧化硅的SRAM 2字突发架构（2字突发结36 -兆位的DDR - II二氧化硅的SRAM
|
Cypress Semiconductor Corp.
|
| GS8662D09E-333I GS8662D08E GS8662D09GE-200I GS8662 |
72Mb SigmaQuad-II Burst of 4 SRAM 8M X 9 DDR SRAM, 0.45 ns, PBGA165
72Mb SigmaQuad-II Burst of 4 SRAM 72Mb SigmaQuad -Ⅱ的4 SRAM的突
72Mb SigmaQuad-II Burst of 4 SRAM 8M X 8 DDR SRAM, 0.45 ns, PBGA165
72Mb SigmaQuad-II Burst of 4 SRAM 8M X 8 DDR SRAM, 0.5 ns, PBGA165
72Mb SigmaQuad-II Burst of 4 SRAM 8M X 9 DDR SRAM, 0.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8342R18GE-267 GS8342R36GE-167 GS8342R18E-267 GS8 |
36Mb SigmaCIO DDR-II Burst of 4 SRAM 4M X 8 DDR SRAM, 0.45 ns, PBGA165
36Mb SigmaCIO DDR-II Burst of 4 SRAM 2M X 18 DDR SRAM, 0.45 ns, PBGA165
36Mb SigmaCIO DDR-II Burst of 4 SRAM 4M X 9 DDR SRAM, 0.5 ns, PBGA165
36Mb SigmaCIO DDR-II Burst of 4 SRAM 4M X 9 DDR SRAM, 0.45 ns, PBGA165
36Mb SigmaCIO DDR-II Burst of 4 SRAM 1M X 36 DDR SRAM, 0.5 ns, PBGA165
36Mb SigmaCIO DDR-II Burst of 4 SRAM 2M X 18 DDR SRAM, PBGA165
|
GSI Technology, Inc.
|
