| PART |
Description |
Maker |
| S29GL032N11TAIV13 2N11FAIV22 S29GL032N70BAI43 S29G |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 110 ns, PDSO56
2M X 16 FLASH 3V PROM, 70 ns, PBGA48
2M X 16 FLASH 3V PROM, 70 ns, PBGA64
2M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 70 ns, PBGA48
4M X 16 FLASH 3V PROM, 90 ns, PBGA48
|
Spansion, Inc.
SPANSION LLC
|
| NAND512W3A2AN6E NAND01GW3A2AN6E |
64M X 8 FLASH 3V PROM, 12000 ns, PDSO48
128M X 8 FLASH 3V PROM, 12000 ns, PDSO48
|
STMICROELECTRONICS
NUMONYX
|
| DP5Z1MM16PI3-12C DP5Z1MM16PJ3-12B DP5Z1MW16PA3-12B |
1M X 16 FLASH 5V PROM, 120 ns, CQIP48 HERMETIC SEALED, STRAIGHT, SLCC-48
1M X 16 FLASH 5V PROM, 120 ns, CQCC48
1M X 16 FLASH 5V PROM, 120 ns, CPGA50
1M X 16 FLASH 5V PROM, 150 ns, CQCC48
|
|
| JS48F4400P0VB00 PF48F2000P0ZBQ0A JS28F128P30B85B P |
32M X 16 FLASH 1.8V PROM, 95 ns, PDSO56 14 X 20 MM, LEAD FREE, TSOP-56
4M X 16 FLASH 1.8V PROM, 88 ns, PBGA88 8 X 10 MM, 1.20 MM HEIGHT, LEAD FREE, SCSP-88
8M X 16 FLASH 1.8V PROM, 88 ns, PDSO56
16M X 16 FLASH 1.8V PROM, 88 ns, PBGA64
|
Numonyx Asia Pacific Pte, Ltd.
|
| K9F1G08D0M K9F1G16D0M K9F1G08U0M-YCB00 |
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
128M X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| CAT28F001N-15TT CAT28F001P-70B CAT28F001N-15BT CAT |
128K X 8 FLASH 12V PROM, 150 ns, PDIP32
128K X 8 FLASH 12V PROM, 70 ns, PQCC32
128K X 8 FLASH 12V PROM, 70 ns, PDIP32 PLASTIC, DIP-32
x8 Flash EEPROM x8闪存EEPROM
1 Megabit CMOS Boot Block Flash Memory
|
Ironwood Electronics
Atmel, Corp.
Rectron Semiconductor
http://
|
| AM29DL16XC AM29DL164CB80WCI AM29DL164CB120WCE AM29 |
Am29DL16xC - 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only. Simultaneous Operation Flash Memory Am29DL16xC - 16兆位米8 1个M x 16位）.0伏的CMOS只。同时作业闪
2M X 8 FLASH 3V PROM, 80 ns, PBGA48
2M X 8 FLASH 3V PROM, 120 ns, PBGA48
2M X 8 FLASH 3V PROM, 90 ns, PBGA48
|
AMIC Technology, Corp.
ADVANCED MICRO DEVICES INC
|
| S29GL032N90FAI033 S29GL032N90BAI043 S29GL032N70TAI |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 90 ns, PBGA64
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 90 ns, PBGA48
2M X 16 FLASH 3V PROM, 70 ns, PDSO56
2M X 16 FLASH 3V PROM, 90 ns, PDSO56
2M X 16 FLASH 3V PROM, 70 ns, PBGA64
2M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion, Inc.
SPANSION LLC
|
| S29GL01GP12TFI023 S29GL128P13FAI023 S29GL01GP12FAI |
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 110 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 3.0伏只页面模式闪存具有90纳米MirrorBit工艺技
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 130 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 8M X 16 FLASH 3V PROM, 110 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 130 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 120 ns, PBGA64
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| M29W400B-100M5 STMICROELECTRONICS-M29W400T-120ZA1T |
256K X 16 FLASH 2.7V PROM, 100 ns, PDSO44
512K X 8 FLASH 2.7V PROM, 100 ns, PBGA48
256K X 16 FLASH 2.7V PROM, 100 ns, PDSO48
256K X 16 FLASH 2.7V PROM, 150 ns, PDSO48
256K X 16 FLASH 2.7V PROM, 120 ns, PDSO48
256K X 16 FLASH 2.7V PROM, 150 ns, PDSO44
|
STMICROELECTRONICS
|
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