| PART |
Description |
Maker |
| 2SC5545ZS-TL-E |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR LEAD FREE, SC-61AA, MPAK-4
Silicon NPN Epitaxial VHF / UHF wide band amplifier
|
Renesas Electronics Corporation
|
| 2SC5088 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOESE AMPLIFIER APPLICATIONS)
VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| BB515E6433 |
VHF-UHF BAND, 18.7 pF, SILICON, VARIABLE CAPACITANCE DIODE
|
SIEMENS A G
|
| 1N5692AB 1N5688AB |
VHF-UHF BAND, 56 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14
VHF-UHF BAND, 27 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| JDP2S01E JDP2501E |
SILICON, PIN DIODE
UHF~VHF BAND RF ATTENUATOR APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| 1N5446A 1N5468A 1N5475ACHIP |
VHF-UHF BAND, 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
| 2SC5812WG-TR-E |
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
http://
Renesas Electronics Corporation
|
| 2SC5758 |
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
Hitachi Semiconductor
|
| 2SC5828 |
Silicon NPN Epitaxial VHF/UHF Wide band amplifier
|
HITACHI[Hitachi Semiconductor]
|
| 2SC5828 |
Silicon NPN Epitaxial VHF/UHF Wide band amplifier
|
Hitachi Semiconductor
|
| MV1660BCHIP 1N5472A MV1630 MV1630CCHIP 1N5444CCHIP |
VHF-UHF BAND, 47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 18 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
|
