| PART |
Description |
Maker |
| REEL-DFN-8C |
(3x3x0.75mm) Carrier Width (W) 12.0 -0.1 mm
|
Analog Microelectronics
|
| X2784AG-08TT I2781A-08SR I2781A-08ST I2781A-08TR I |
PS MEDICAL SWITCHER 15V .73A 156 MHz, OTHER CLOCK GENERATOR, PDSO8
General Purpose EMI Reduction IC 156 MHz, OTHER CLOCK GENERATOR, PDSO8
General Purpose EMI Reduction IC 312 MHz, OTHER CLOCK GENERATOR, PDSO8
General Purpose EMI Reduction IC 78 MHz, OTHER CLOCK GENERATOR, PDSO8
PS LINEAR DUAL 5V@6A 9-15@2.5A
ICs for Inductive Proximity Switches; Package: P-DSO-14; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 0.9 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC;
ICs for Inductive Proximity Switches; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 0.9 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC;
ICs for Inductive Proximity Switches; Package: P-DSO-8; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 1.0 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC;
ICs for Inductive Proximity Switches; Package: P-DSO-8; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 1.0 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC;
|
Alliance Semiconductor ...
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
http://
|
| 15KPJ45 15KPJ45A 15KPJ45C 15KPJ45CA 15KPJ58 15KPJ5 |
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 376 V @ Ipp = 40 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 220 V. Vbr(min/max) = 242/310.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 394 V @ Ipp = 38 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/205.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 259 V @ Ipp = 58 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/226.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 287 V @ Ipp = 52 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/182.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 231 V @ Ipp = 65 A.
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/169.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 214 V @ Ipp = 70 A.
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压20伏特175000脉冲峰值功率）
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压20伏特75000脉冲峰值功率）
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压220伏特75000脉冲峰值功率）
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/153.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 193 V @ Ipp = 78 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/165.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 209 V @ Ipp = 72 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 177 V @ Ipp = 85 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/239.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 304 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
|
Pan Jit International I...
PANJIT[Pan Jit International Inc.]
PanJit International Inc.
PanJit International, Inc.
|
| FS2VS-12 |
Solid-State Panel Mount Relay; Output Device:SCR; Output Voltage Max:280Vrms; Output Voltage Min:24Vrms; Control Voltage Max:140Vrms; Control Voltage Min:90Vrms; Load Current Max:12A; Switching:Zero Cross RoHS Compliant: Yes
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| DPA4111 |
Solid-State PC Board Relay; Output Device:SCR; Output Voltage Min:20Vrms; Output Voltage Max:140Vrms; Load Current Max:1A; Switching:Zero Cross; Output Current Max:1A; Output Current Min:0.025Arms; Output Type:SCR RoHS Compliant: Yes
|
CRYDOM CORP
|
| SC-70-6 |
A : MIN 0.80 MAX 1.10 A1 : MIN 0.00 MAX .010
|
Analog Microelectronics
|
| TO-263-3 |
(D2 PAK) A : MIN 9.65 MAX 10.67 B : MIN 8.28 MAX 9.66
|
Analog Microelectronics
|
| M29F040 M295V040-120N6R M295V040-120XK6R M295V040- |
Excalibur Low-Noise High-Speed JFET-Input Dual Operational Amplifier 8-SOIC
JFET-Input Low Power High Drive Quad Operational Amplifier 14-CFP -55 to 125
JFET-Input Low Power High Drive Quad Operational Amplifier 14-SOIC 4兆位512KB的8，统一座单电源闪存
JFET-Input High Speed Low Noise Single Operational Amplifier 8-CDIP -55 to 125 4兆位512KB的8，统一座单电源闪存
Switch Mode Power Supply; Series:ZWS; Output Voltage:48VDC; Output Power Max:302.4W; Output Current:6.3A; Number of Outputs:1; Approval Bodies:UL, CSA, CE; Input Current Max:4A; Input Current Min:2A; Supply Voltage Max:265VAC 4兆位512KB的8，统一座单电源闪存
Switch Mode Power Supply; Series:ZWS; Output Voltage:36VDC; Output Power Max:302.4W; Output Current:8.4A; Number of Outputs:1; Leaded Process Compatible:No; Approval Bodies:UL, CSA, CE; Input Current Max:4A; Input Current Min:2A 4兆位512KB的8，统一座单电源闪存
Excalibur Low-Noise High-Speed JFET-Input Operational Amplifier 8-SOIC 4兆位512KB的8，统一座单电源闪存
Switch Mode Power Supply; Series:ZWS; Output Voltage:12VDC; Output Power Max:15W; Output Current:1.25A; Number of Outputs:1; Supply Voltage Max:265VAC; Supply Voltage Min:85VAC 4兆位512KB的8，统一座单电源闪存
JFET-Input Low Power High Drive Quad Operational Amplifier 14-CDIP -55 to 125 4兆位512KB的8，统一座单电源闪存
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory 4兆位512KB的8，统一座单电源闪存
Switch Mode Power Supply; Series:ZWS; Output Voltage:24VDC; Output Power Max:300W; Output Current:12.5A; Number of Outputs:1; Approval Bodies:UL, CSA, CE; Input Current Max:4A; Input Current Min:2A; Supply Voltage Max:265VAC
Switch Mode Power Supply; Series:ZWS; Output Voltage:48VDC; Output Power Max:206.4W; Output Current:4.3A; Number of Outputs:1; Approval Bodies:UL, CSA, CE; Input Current Max:2.8A; Input Current Min:1.4A; Supply Voltage Max:265VAC
PSU, OPEN FRAME, 150W, 12V; Voltage, output:12V; Current, output:12.5A; Power rating:150W; Voltage, supply min:85V; Voltage, supply max:265V; Length / Height, external:40mm; Width, external:75mm; Depth, external:222mm; Frequency, RoHS Compliant: Yes
Switch Mode Power Supply; Series:ZWS; Output Voltage:24VDC; Output Power Max:201.6W; Output Current:8.4A; Number of Outputs:1; Approval Bodies:UL, CSA, CE; Input Current Max:2.8A; Input Current Min:1.4A; Supply Voltage Max:265VAC
POWER SUPPLY, 150 WATTS
Switch Mode Power Supply; Series:ZWS; Output Voltage:36VDC; Output Power Max:201.6W; Output Current:5.6A; Number of Outputs:1; Approval Bodies:UL, CSA, CE; Input Current Max:2.8A; Input Current Min:1.4A; Supply Voltage Max:265VAC
JFET-Input Low Power High Drive Quad Operational Amplifier 20-LCCC -55 to 125
4 Mbit 512Kb x8 / Uniform Block Single Supply Flash Memory
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
| CSD2475G CSE2410 |
TRIGGER OUTPUT SOLID STATE RELAY, 4000 V ISOLATION-MAX
Solid State Relay; Output Device:SCR; Output Voltage Max:280Vrms; Output Voltage Min:24Vrms; Control Voltage Max:32VDC; Control Voltage Min:15VDC; Load Current Max:10A; Switching:Zero Cross; Output Current:10A; Output Type:SCR
|
CRYDOM CORP
|
| TC74AC164P07 TC74AC164F TC74AC164FN TC74AC164FT |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 25.10 to 28.90; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.80 to 3.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 23.72 to 24.78; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.80 to 3.05; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 24.54 to 25.57; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
CMOS Digital Integrated Circuit Silicon Monolithic 8-Bit Shift Register (S-IN, P-OUT)
|
Toshiba Corporation
Toshiba Semiconductor
|
