| PART |
Description |
Maker |
| HY57V28420BLT HY57V28420BT |
32Mx4|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M
|
|
| AN10935 |
Using SDR/DDR SDRAM memories
|
NXP
|
| MT48H8M32LF |
Mobile Low-Power SDR SDRAM
|
Micron Technology
|
| HYM71V16635HCT8 |
16Mx64|3.3V|K/H|x8|SDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
|
| HY57V28820AT HY57V28820AT-H |
16Mx8|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
| HYM71V16M635BLT6 |
16Mx64|3.3V|K/H|x8|SDR SDRAM - SO DIMM 128MB 16Mx64 | 3.3 | | x8 | SDRAM的特别提款权-28MB的内
|
Hooray Electronics Co., Ltd.
|
| HYM71V8M655HCT6 |
8Mx64|3.3V|8/P/S|x4|SDR SDRAM - SO DIMM 64MB 8Mx64 | 3.3 | 8/P/S | x4 | SDRAM的特别提款权-4MB的内
|
Daesan Electronics, Corp.
|
| HYM71V32S755AT4M |
32Mx72|3.3V|P/S|x18|SDR SDRAM - Registered DIMM 256MB 32Mx72 | 3.3 | | x18 | SDRAM的特别提款权-注册256MB的内
|
Omron Electronics, LLC
|
| HYM72V64756BLT8-P HYM72V64756BLT8-S HYM72V64756BT8 |
64Mx72|3.3V|P/S|x18|SDR SDRAM - Unbuffered DIMM 512MB 64Mx72 | 3.3 | | x18 | SDRAM的特别提款权-无缓冲DIMM 512MB
|
Samsung Semiconductor Co., Ltd.
Leshan Radio Company, Ltd.
Hynix Semiconductor
|
| MT48LC4M16A2B4-6AITJ MT48LC4M16A2B4-75 MT48LC4M16A |
SDR SDRAM MT48LC16M4A2 ?4 Meg x 4 x 4 Banks MT48LC8M8A2 ?2 Meg x 8 x 4 Banks MT48LC4M16A2 ?1 Meg x 16 x 4 Banks
|
Micron Technology
|
| 12226-8250-00FR 12214-8250-00FR |
3M SHRUNK DELTA RIBBON (SDR) CONN.
3M SHROUNK DELTA RIBBON (SDR) CONN.
|
3M Electronics
|
| HB52R1289E22 HB52R1289E22-A6B HB52R1289E22-B6B |
1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M ??4 Components) PC100 SDRAM
1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 4 Components) PC100 SDRAM 1 GB的注册SDRAM的内 GB的注册SDRAM的内存（364 M组件）PC100的SDRAM内存
1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M × 4 Components) PC100 SDRAM
|
ELPIDA MEMORY INC
Elpida Memory, Inc.
|
