| PART |
Description |
Maker |
| DOM40S3R288 DOM40S3R080 |
40Pin Flash Disk Module Min.16MB ~ Max.512MB, True IDE Interface 40Pin盘模块Min.16MBMax.512MB，真IDE接口
|
Hanbit Electronics Co., Ltd.
|
| DOM44S3R288 DOM44S3R224 |
44Pin Flash Disk Module Min.16MB ~ Max.512MB, True IDE Interface 44Pin盘模块Min.16MBMax.512MB，真IDE接口
|
Hanbit Electronics Co., Ltd.
|
| K4T51043QB-ZCD5 K4T51163QB-GCD5 K4T51083QB-GCD5 K4 |
512Mb B-die DDR2 SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4T51043Q K4T51043QB-GCCC K4T51043QB-GCD5 K4T51043 |
512Mb B-die DDR2 SDRAM
|
Samsung semiconductor
|
| K4H511638F |
512Mb F-die DDR SDRAM Specification
|
Samsung semiconductor
|
| K4H510838C-UCB3 K4H510438C-UCB0 K4H510438C-ULA2 K4 |
512MB C-DIE DDR SDRAM SPECIFICATION
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4T51043QE |
512Mb E-die DDR2 SDRAM Specification
|
Samsung semiconductor
|
| K4H511638D K4H510438D |
(K4H51xx38D) 512Mb D-die DDR SDRAM Specification
|
Samsung semiconductor
|
| M378T2953BGZ0-CD5_CC M378T2953BGZ3-CD5_CC M378T335 |
240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| AM29LV200B03 AM29LV200BT-60RDRC AM29LV200BT-60RDRI |
128K X 16 FLASH 3V PROM, 70 ns, UUC43
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1
|
SPANSION LLC
AMD[Advanced Micro Devices]
http://
|
| S30MS512P25BAW000 S30MS512P25BAW003 S30MS512P25BFW |
32M X 16 FLASH 1.8V PROM, 25 ns, PBGA137
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit??Technology
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 128M X 8 FLASH 1.8V PROM, 25 ns, PBGA137
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit?/a> Technology
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology
|
SPANSION LLC
Spansion, Inc.
|
