PART |
Description |
Maker |
K4H511638F |
512Mb F-die DDR SDRAM Specification
|
Samsung semiconductor
|
K4H510838C-UCB3 K4H510438C-UCB0 K4H510438C-ULA2 K4 |
512MB C-DIE DDR SDRAM SPECIFICATION
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K4H510438C-ZCCC K4H510438C-ZLB3 K4H510438C-ZLCC K4 |
512MB C-DIE DDR SDRAM SPECIFICATION
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K4H510438D-UC/LA2 K4H510838D-UC/LA2 K4H511638D-UC/ |
512Mb D-die DDR SDRAM Specification
|
Samsung semiconductor
|
NAND01G-M NAND256-M NAND256R3M0 NAND256R3M0AZB5E N |
SPECIALTY MEMORY CIRCUIT, PBGA149 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
|
NUMONYX STMICROELECTRONICS[STMicroelectronics]
|
HFDOM40B-064S2 HFDOM40B-064S1 HFDOM40B-064SX HFDOM |
40Pin Flash Disk Module Min.8MB ~ Max.512MB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.512MB,真正的IDE接口模式.3 / 5.0V工作 40Pin Flash Disk Module Min.8MB ~ Max.512MB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.512MB,真正的IDE接口模式3.3 / 5.0V工作
|
Hanbit Electronics Co.,Ltd. Hanbit Electronics Co., Ltd.
|
M470L3324DU0-LB0 M470L2923DV0-LB0 M470L2923DV0-LB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模8 4针缓冲模块的512MBD为基础的模6 TSOP-II DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模18 4针缓冲模块的512MB的D为基础的模6 TSOP-II DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYB25D512800AT-7 HYB25D512800AT-8 HYB25D512160AT-8 |
512Mb (64Mx8) DDR266A (2-3-3) 512Mb (64Mx8) DDR200 (2-2-2) 512Mb (32Mx16) DDR200 (2-2-2) 512Mb (128Mx4) DDR200 (2-2-2) 512Mb (64Mx8) DDR333 (2.5-3-3) ?的512Mb4Mx8DDR333内存.5-3-3)?
|
Electronic Theatre Controls, Inc.
|
AM29LV200B03 AM29LV200BT-60RDRC AM29LV200BT-60RDRI |
128K X 16 FLASH 3V PROM, 70 ns, UUC43 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1
|
SPANSION LLC AMD[Advanced Micro Devices] http://
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