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K7Q163664B10 - 512Kx36 & 1Mx18 QDRTM b4 SRAM

K7Q163664B10_6608864.PDF Datasheet


Part No.	K7Q163664B10 K7Q161864B
Description	512Kx36 & 1Mx18 QDRTM b4 SRAM
File Size	455.40K / 17 Page
Maker	Samsung semiconductor
Homepage	http://www.samsung.com/Products/Semiconductor/
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K7P163666A-HC25 K7P163666A-HC33 K7P161866A-HC25 K7	1M X 18 STANDARD SRAM, 1.6 ns, PBGA119 512Kx36 AND 1Mx18 Synchronous Pipelined SRAM 512Kx361Mx18同步流水线的SRAM 512K X 36 STANDARD SRAM, 1.5 ns, PBGA119	SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
K7N161845M K7N163645M	512Kx36 & 1Mx18-Bit Pipelined NtRAMTM 512Kx36 512Kx36 & 1Mx18-Bit Pipelined NtRAMTM	http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
K7B161825A K7A163600A K7A163601A K7B163625A K7A161	512Kx36 & 1Mx18 Synchronous SRAM 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 400V; Case Size: 35x30 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 470uF; Voltage: 250V; Case Size: 25x30 mm; Packaging: Bulk 512Kx36	Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. ITT, Corp.
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