| PART |
Description |
Maker |
| GS8644Z18 GS8644Z18E-200I GS8644Z18E-225 GS8644Z18 |
72Mb NBT SRAMs
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
ETC[ETC]
GSI Technology
|
| GS8662DT19BD-300 GS8662DT19BD-333 GS8662DT19BD-400 |
72Mb SigmaQuad-II TM Burst of 4 SRAM
JEDEC-standard pinout and package
Dual Double Data Rate interface
72Mb SigmaQuad-II TMBurst of 4 SRAM
|
GSI Technology
|
| GS864418E-200IV GS864418E-200V GS864418E-133IV GS8 |
4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8644V36E-250 GS8644V18E-133I |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
|
GSI Technology
|
| GS864018T-XXX |
(GS8640xxT) 4M x 18/ 2M x 32/ 2M x 36 72Mb Sync Burst SRAMs
|
GSI Technology
|
| K7J643682M-FECI30 K7J641882M K7J641882M-FC16 K7J64 |
72Mb M-die DDRII SRAM Specification
|
SAMSUNG[Samsung semiconductor]
|
| GS864018T-XXXV |
(GS8640xxGT-xxxV) 4M x 18/ 2M x 32/ 2M x 36 72Mb Sync Burst SRAMs
|
GSI Technology
|
| GS8640Z18T-200IV GS8640Z18T-167IV GS8640Z18T-167V |
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8640Z18T-250I GS8640Z18T GS8640Z18T-167 GS8640Z1 |
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8642Z18B-300 GS8642Z18B-300I GS8642Z18B-250 GS86 |
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS864036GT-167I GS864036T-200 GS864018GT-167 GS864 |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 36 CACHE SRAM, 8 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 36 CACHE SRAM, 7.5 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 4M X 18 CACHE SRAM, 8 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 32 CACHE SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
