Part Number Hot Search : 
35096 NTE261 087898 1460B 2SD2495 GL3KG63 V07E440P SH703
Product Description
Full Text Search

K7I323684M-FC160 - 1M X 36 DDR SRAM, 0.5 ns, PBGA165

K7I323684M-FC160_6611048.PDF Datasheet


 Full text search : 1M X 36 DDR SRAM, 0.5 ns, PBGA165
 Product Description search : 1M X 36 DDR SRAM, 0.5 ns, PBGA165


 Related Part Number
PART Description Maker
CY7C1429JV18-250BZC CY7C1429JV18-250BZI CY7C1429JV 4M X 9 DDR SRAM, 0.45 ns, PBGA165
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CYPRESS SEMICONDUCTOR CORP
GS8662T09E-333 72Mb SigmaCIO DDR-II Burst of 2 SRAM 8M X 9 DDR SRAM, 0.45 ns, PBGA165
GSI Technology, Inc.
GS8662S09E-167I 72Mb Burst of 2 DDR SigmaSIO-II SRAM 8M X 9 DDR SRAM, 0.5 ns, PBGA165
GSI Technology, Inc.
CY7C1518JV18-250BZC CY7C1518JV18-300BZXC 72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
Cypress Semiconductor, Corp.
CY7C1518KV18-300BZXC 72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
Cypress Semiconductor, Corp.
CY7C1528V18-167BZC CY7C1528V18-167BZI CY7C1528V18- 8M X 9 DDR SRAM, 0.5 ns, PBGA165 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
8M X 9 DDR SRAM, 0.45 ns, PBGA165 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
72-Mbit DDR-II SRAM 4-Word Burst Architecture
Cypress Semiconductor, Corp.
CAT64LC10ZJ CAT64LC10ZP CAT64LC10J-TE7 CAT64LC10J- 18-Mbit QDR™-II SRAM 4-Word Burst Architecture
18-Mbit DDR-II SRAM 2-Word Burst Architecture
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
4-Mbit (256K x 18) Flow-Through Sync SRAM SPI串行EEPROM
SPI Serial EEPROM SPI串行EEPROM
Analog Devices, Inc.
CY7C1416AV18-167BZXI CY7C1416AV18-167BZC CY7C1416A 36-Mbit DDR-II SRAM 2-Word Burst Architecture 2M X 18 DDR SRAM, 0.5 ns, PBGA165
36-Mbit DDR-II SRAM 2-Word Burst Architecture 2M X 18 DDR SRAM, 0.45 ns, PBGA165
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
IS61DDB22M36-250M3 IS61DDB22M36-250M3L IS61DDB22M3 72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
2M X 36 DDR SRAM, 0.35 ns, PBGA165
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
CY7C1429AV18 CY7C1422AV18 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture(2字Burst结构36-Mbit DDR-II SIO SRAM) 36兆位的DDR - II二氧化硅的SRAM 2字突发架构(2字突发结36 -兆位的DDR - II二氧化硅的SRAM
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture(2字Burst结构6-Mbit DDR-II SIO SRAM) 36兆位的DDR - II二氧化硅的SRAM 2字突发架构(2字突发结36 -兆位的DDR - II二氧化硅的SRAM
Cypress Semiconductor Corp.
IDT71P73204 IDT71P73604 1.8V 2M x 8 DDR II Pipelined SRAM
1.8V 512K x 36 DDR II Pipelined SRAM
IDT
GS81302R08E-200I GS81302R09E-200IT GS81302R09E-167 16M X 8 DDR SRAM, 0.45 ns, PBGA165
4M X 9 DDR SRAM, 0.45 ns, PBGA165
16M X 9 DDR SRAM, 0.5 ns, PBGA165
4M X 9 DDR SRAM, 0.5 ns, PBGA165
GSI TECHNOLOGY
 
 Related keyword From Full Text Search System
K7I323684M-FC160 channel K7I323684M-FC160 Noise K7I323684M-FC160 positive K7I323684M-FC160 Speed K7I323684M-FC160 Nation
K7I323684M-FC160 mhz K7I323684M-FC160 参数 封装 K7I323684M-FC160 mhz K7I323684M-FC160 standard K7I323684M-FC160 filetype:pdf
 

 

Price & Availability of K7I323684M-FC160

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.77763390541077