| PART |
Description |
Maker |
| BD442 BD439 BD441 4130 BD440 -BD441 -BD442 |
Complemetary Silicon Power Transistors(浜?ˉ纭?????浣??)
From old datasheet system
COMPLEMENTARY SILICON POWER TRANSISTORS
Complemetary Silicon Power Transistors(互补硅功率晶体管)
|
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| 2N6388 2N6387 |
DARLINGTON NPN SILICON POWER TRANSISTORS
Plastic Medium-Power Silicon Transistors
|
ONSEMI[ON Semiconductor]
|
| MJ15003 MJ15004 ON1980 |
From old datasheet system
20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 250 WATTS
POWER TRANSISTORS COMPLEMENTARY SILICON 20 A, 140 V, PNP, Si, POWER TRANSISTOR, TO-204AA
|
MOTOROLA INC
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MJB42CT4 MJB41C MJB41CT4 MJB42C MJB41C-D |
Complementary Silicon Plastic Power Transistors D2PAK for Surface Mount
Complementary Silicon Plastic Power Transistors 6 A, 100 V, PNP, Si, POWER TRANSISTOR
Complementary Silicon Plastic Power Transistors 6 A, 100 V, NPN, Si, POWER TRANSISTOR
|
http://
ONSEMI[ON Semiconductor]
|
| TIP142 TIP147 TIP146 TIP145 TIP141 TIP140 4132 |
Complemetary Silicon Power Darlington Transistors(浜?ˉ纭????揪??】?朵?绠?
From old datasheet system
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
|
STMicro
|
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
| BD312 |
Silicon NPN Power Transistors
Silicon PNP Power Transistors
|
Savantic, Inc.
|
| BD436 BD438 BD434 |
Silicon NPN Power Transistors
Silicon PNP Power Transistors
|
Savantic, Inc.
|
| 2SB507 |
Silicon NPN Power Transistors
Silicon PNP Power Transistors
|
Savantic, Inc.
|
