| PART |
Description |
Maker |
| FQI9N08L FQB9N08L FQB9N08LTM FQI9N08LTU |
80V LOGIC N-Channel MOSFET 9.3 A, 80 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
80V N-Channel Logic Level QFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
|
| STS3C2F80 |
N-CHANNEL 80V - 0.069 OHM - 3A SO-8 P-CHANNEL 80V - 0.20 OHM - 2.3A SO-8 STripFET™ II POWER MOSFET
|
ST Microelectronics
|
| FQB70N08 FQI70N08 FQB70N08TM |
FQB70N08 / FQI70N08 80V N-Channel MOSFET
TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,70A I(D),TO-263AB
|
FAIRCHILD[Fairchild Semiconductor]
|
| AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET
30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32
x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp.
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| IRF7491 IRF7491TR |
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|
| IRF7491TRPBF |
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| HUFA75531SK8 |
6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFR3418 IRFU3418 IRFR3418TR IRFR3418TRL |
80V Single N-Channel HEXFET Power MOSFET in a D-Pak package
|
IRF[International Rectifier]
|
| HUFA76504DK8T HUFA76504DK8 |
2.3A, 80V, 0.222 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET 2500 mA, 80 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 8A条（丁）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 4.9AI（四）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 1A条（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 28A条（丁）|04AE
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五（巴西）直| 600毫安（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五（巴西）直|5A条（丁）|04AE
|
Black Box, Corp.
Bourns, Inc.
Vishay Intertechnology, Inc.
Samsung Semiconductor Co., Ltd.
3M Company
|
| FDC3512 |
80V N-Channel PowerTrench .... MOSFET
80V N-Channel PowerTrench MOSFET
From old datasheet system
|
Fairchild Semiconductor
|
| FDB86360-F085 FDB86360F085 |
N-Channel Power Trench MOSFET 80V, 110A, 1.8mOhms
N-Channel Power Trench? MOSFET
|
Fairchild Semiconductor
|
