| PART |
Description |
Maker |
| MHL21336NN |
3G Band RF Linear LDMOS Amplifier
|
Freescale Semiconductor, Inc
|
| MHL9236N |
Cellular Band RF Linear LDMOS Amplifier
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MHL9838N |
Cellular Band RF Linear LDMOS Amplifier 蜂窝频段射频线性LDMOS的放大器
|
Motorola Mobility Holdings, Inc.
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| BLF573S BLF573 |
HF / VHF power LDMOS transistor
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
HF - VHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
| MHL21336N |
RF Linear LDMOS Amplifier
|
Motorola Semiconductor
|
| BLL1214-250 |
L-band radar LDMOS transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BLF6G22-180RN BLF6G22LS-180RN |
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Power LDMOS transistor BLF6G22-180RN<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
Power LDMOS transistor BLF6G22-180RN<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLL6H1214LS-250 |
LDMOS L-band radar power transistor
|
NXP Semiconductors
|
| BLS7G2933S-150 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors N.V.
|
| BLS6G2731S-120 BLS6G2731-120 |
LDMOS S-band radar power transistor
|
NXP Semiconductors N.V.
|
| MS1278 |
Bipolar/LDMOS Transistor
RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS
|
Microsemi Corporation
Advanced Power Technology
|
