| PART |
Description |
Maker |
| MB84VD23180FM |
64M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM 6400（x16）的快闪记忆体和4M（x16）的静态RAM
|
Spansion, Inc.
|
| M36W416TG85ZA1T M36W416TG70ZA6T M36W416TG-ZAT M36W |
16 Mbit 1Mb x16, Boot Block Flash Memory and 4Mbit 256Kb x16 SRAM, Multiple Memory Product
CANMS3470L16-23PL/C 16兆x16插槽，开机区块快闪记忆体Mbit的SRAM56Kb x16，内存产品多
|
意法半导
STMicroelectronics N.V.
|
| HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM
4Mx16|3.3V|4K|H|SDR SDRAM - 64M
x16 SDRAM x16内存
|
Hynix Semiconductor
TT electronics Semelab, Ltd.
|
| MB84VD22281EA MB84VD22281EA-90-PBS MB84VD22281EE M |
32M (X 8/X16) FLASH MEMORY & 8M (X 8/X16) STATIC RAM
POT 2.0K OHM 1/4 SQ CERM SL MT
32M (X 8/X16) FLASH MEMORY & 8M (X 8/X16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA71
|
Fujitsu Component Limited.
Fujitsu Limited
Fujitsu, Ltd.
|
| IBM0325404CT3A-75A IBM03254B4CT3A-75A IBM0325804CT |
x16 SDRAM
x8 SDRAM x8 SDRAM内存
x4 SDRAM Module x4内存模块
|
Electronic Theatre Controls, Inc.
Hanbit Electronics Co., Ltd.
|
| K4X56163PE-LG K4X56163PE-LFG |
16M x16 Mobile DDR SDRAM 1,600 x16移动DDR SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HY62UF16404D |
x16|3V|55/70|Super Low Power Slow SRAM - 4M x16 | 3V的| 55/70 |超级低功耗SRAM的速度 4
|
GE Security, Inc.
|
| MB84VD2328 MB84VD23280FA-70PBS MB84VD23280FA MB84V |
64M (X8/X16) FLASH MEMORY & 8M (X8/X16) STATIC RAM
2-Stacked MCP
|
SPANSION[SPANSION]
Fujitsu
|
| MB84VD23381HJ-70 MB84VD23381HJ-70PBS |
64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM
|
Advanced Micro Devices
|
| SST39W800A-90-4I-M2KE SST39W800A-90-4I-M2QE SST39W |
64 Mbit (x16) Multi-Purpose Flash Plus 64兆位（x16）的多功能闪存加
|
Silicon Storage Technology, Inc.
|
| LRS1805A |
Stacked Chip 64M (x16) Flash Memory 16M (x16) Smartcombo RAM
|
Sharp Electrionic Components
|
| MB84VD22281EA-90 MB84VD22282EA-90 MB84VD22283EA-90 |
32M (x 8/x16) FLASH MEMORY & 8M (x 8/x16) STATIC RAM
|
FUJITSU[Fujitsu Media Devices Limited]
|
