| PART |
Description |
Maker |
| CLX27-05 CLX27-10 |
HiRel X-Band GaAs Power-MESFET
|
Infineon Technologies A...
|
| CLY29-10 CLY29 CLY29-00 CLY29-05 |
HiRel C-Band GaAs Power-MESFET
SMT CAP 10NF 50V 10% CERAMIC 0805
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
L-Band Medium & High Power GaAs FET
|
FUJITSU LTD
EUDYNA[Eudyna Devices Inc]
|
| BFY181 |
From old datasheet system
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
|
Siemens Semiconductor Group
|
| BXY43-T1 BXY43 BXY43-FP BXY43-P1 BXY43-T |
PUBLICATIONS, BOOKS RoHS Compliant: NA
HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor Current controlled RF resistor for RF attenuators and switches)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CLX30-10 CLX30 CLX30-00 CLX30-05 |
HiRel X-Band GaAs Power-MESFET
Reed Relay; Contacts:SPST; Contact Carry Current:1A; Coil Voltage DC Max:24V; Relay Terminals:Thru Hole; Switching Current Max:0.5A; Switching Voltage Max:200V; Contact Carrying Power:10W; Leaded Process Compatible:Yes RoHS Compliant: Yes
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CFA0103 CFA010306 CFA0103-L1 |
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
Low Noise GaAs FETs
|
MIMIX BROADBAND INC
|
| NE8500295-8 NE8500295-6 NE8500295-4 NE85002 NE8500 |
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC Corp.
NEC[NEC]
|
| TG2401F |
1.9 GHz Band TX Fronted IC
PHS, Digital Cordless Telecommunication
GaAs Linear Integrated Circuit GaAs Monolithic
|
Toshiba Semiconductor
|
| TG2006F |
GaAs Linear Integrated Circuit GaAs Monolithic 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication
|
TOSHIBA
|
