| PART |
Description |
Maker |
| ZVNL120G |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET
SOT223 N-CHANNEL ENHANCEMENT MODE
|
Zetex Semiconductors
Diodes Incorporated
|
| ARF447 ARF446 |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 250V 250W 65MHz
N-CHANNEL ENHANCEMENT MODE
|
ADPOW[Advanced Power Technology]
|
| STE36N50-DK |
N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE
N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
|
STMicroelectronics
ST Microelectronics
|
| STE36N50-DA |
N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE
N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
|
STMicroelectronics
ST Microelectronics
|
| STB55NE06 5405 |
N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N沟道增强模式功率MOSFET) N沟道增强模式“的单一的功能SIZETM”功率MOSFET（不适用沟道增强模式功率MOSFET的）
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE ?POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| TN2410L VN2406E |
N-Channel Enhancement-Mode MOSFET(最小漏源击穿电40V，夹断电.18AN沟道增强型MOSFET晶体
N-Channel Enhancement-Mode MOSFET(???婕???荤┛?靛?40V锛?す???娴?.18A??娌??澧?己??OSFET?朵?绠?
|
Vishay Intertechnology,Inc.
|
| STB7NB40 5362 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET)
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
From old datasheet system
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| APM9988COC-TUL APM9988COC-TRL |
Dual N-Channel Enhancement Mode MOSFET 双N沟道增强型MOS
Dual N-Channel Enhancement Mode MOSFET 6 A, 20 V, 0.02 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MO-153AA
|
Anpec Electronics, Corp.
|
| ZVN4310G |
SOT223 N-CHANNEL ENHANCEMENT
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
Zetex Semiconductors
http://
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| STW12NA60 STH12NA60_FI 3561 STH12NA60 STH12NA60FI |
From old datasheet system
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Supercapacitor; Capacitance:0.47F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin
N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式快速功率MOSFET)
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
