| PART |
Description |
Maker |
| VIM-810 |
VIM-828
|
Varitronix international limited
|
| VIM-503-DP VIM-503-2 |
VIM-503-DP
|
Varitronix international limited
|
| C380SX500 C380AX500 C380BX500 C380CX500 C380DX500 |
Phase Control SCR 310 Amperes Avg 800 Volts Phase Control SCR 310 Amperes Avg 1600 Volts
|
Powerex Power Semicondu... POWEREX[Powerex Power Semiconductors]
|
| RO2053A-1 |
310.0 MHz SAW Resonator
|
RFM[RF Monolithics, Inc]
|
| 6316 |
Two WE-310 Plugs To RJ45 / RJ48
|
Pomona Electronics
|
| CNX310056E4108 |
CNX 310 XXX CABLE ASSEMBLY
|
Visual Communications Company
|
| NTZD5110N NTZD5110NT1 NTZD5110NT1G NTZD5110NT5G |
Small Signal MOSFET 60 V, 310 mA, Dual N-Channel with ESD Protection 294 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 60 V, 310 mA, Dual N−Channel with ESD Protection, SOT−563
|
ON Semiconductor
|
| PXA300 PXA310 |
Storage Solution for Marvell’s PXA300/310 Platform
|
Actel Corporation
|
| NX8341_06 NX8341 NX8341TB-AZ NX8341TJ-AZ NX8341TL- |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
CEL[California Eastern Labs]
|
| 2N7002E11 2N7002ET1G 2N7002ET3G |
Small Signal MOSFET 60 V, 310 mA, Single, N.Channel, SOT.23 Small Signal MOSFET 60 V, 310 mA, TRENCH, N-Channel 260 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 Small Signal MOSFET
|
ON Semiconductor
|
| L2SK801LT1G L2SK801LT3G |
Small Signal MOSFET 310 mAmps, 60 Volts N?Channel SOT?3
|
Leshan Radio Company
|
| NX5320EH-AZ |
1 310 nm AlGaInAs MQW-FP LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION
|
California Eastern Labs
|