| PART |
Description |
Maker |
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
| MAFRIN0370 |
Single Junction Gull Wing Circulator 860 MHz-960 MHz
|
MACOM[Tyco Electronics]
|
| MAFRIN0448 |
Ultra Low Loss Isolator 860 MHz - 960 MHz
|
MACOM[Tyco Electronics]
|
| DB-55008L-960 |
860 MHz - 960 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER ROHS COMPLIANT PACKAGE
|
ST Microelectronics
|
| UMIL60 |
60 Watts, 28 Volts, Class AB Defcom 225 - 400 MHz
UHF 225-400 MHz, Class C, Common Emitter; P(out) (W): 60; P(in) (W): 8; Gain (dB): 0; Vcc (V): 28; Cob (pF): 70; fO (MHz): 0; Case Style: 55HW-2 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi Corporation
Vishay Semiconductors
|
| PTF10133 |
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 85瓦，860-960兆赫GOLDMOS场效应晶体管
85 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTF10019 |
70 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
70 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
70 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| SD1496 RF617 |
RF & MICROWAVE TRANSISTORS 860-900 MHz CLASS C, BASE STATIONS
From old datasheet system
|
MICROSEMI[Microsemi Corporation]
|
| XD010-14S-D4F |
925-960 MHz Class A/AB 15W Power Amplifier Module
|
SIRENZA[SIRENZA MICRODEVICES]
|
| SD1495-3 RF613 SD14950-03 SD14950-3 |
RF & MICROWAVE TRANSISTORS 900-960 MHz CLASS C BASE STATIONS
From old datasheet system
|
Microsemi Corporation
|
| QPP-006 |
QuikPAC module data. 120W, 925-960 MHz, Class AB power stage.
|
XEMOD
|
