| PART |
Description |
Maker |
| LSC2110-622-ST LSC2110-622 LSC2110-622-BI LSC2110- |
2.5 mW 14 Pin DIL Cooled Laser Module
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| SPLMN98X2 |
Passively Cooled Diode Laser Bar, 40 W cw at 808 nm
|
OSRAM GmbH
|
| SPLMN94X2 |
Passively Cooled Diode Laser Bar, 40 W cw at 940 nm
|
OSRAM GmbH
|
| SPLMN81S9 |
Passively Cooled Diode Laser Bar, 150 W qcw at 808 nm
|
OSRAM GmbH
|
| SPLMN81X2 |
808 nm, LASER DIODE
Passively Cooled Diode Laser Bar, 40 W cw at 808 nm
|
OSRAM GmbH
|
| P3257-30 P3257-31 P2750-06 P2750-08 P325707 P3981- |
MCT photoconductive detector Non-cooled type and TE-cooled type suitable for long, continuous operation
|
Hamamatsu Corporation
|
| EDS2532AABJ-75-E EDS2532AABJ-75L-E |
256M bits SDRAM (8M words 32 bits) 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
256M bits SDRAM (8M words 32 bits) 256M位的SDRAM00万字32位）
256M bits SDRAM (8M words ?32 bits)
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
| EDS6416AHBH-75-E EDS6416CHBH-75-E |
64M bits SDRAM (4M words x 16 bits) 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
64M bits SDRAM (4M words x 16 bits) 6400位的SDRAM4分字× 16位）
|
Elpida Memory, Inc.
|
| IS42S16400D-6T IS42S16400D-6TL IS42S16400D-7TI IS4 |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc.
|
