| PART |
Description |
Maker |
| 3EZ12D5 3EZ4.3D5 3EZ10D5 3EZ5.6D5 3EZ100D5 3EZ110D |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -20% tolerance.
surface mount silicon Zener diodes 硅表面贴装齐纳二极管
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -10% tolerance.
3W SILICON ZENER DIODE
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JGD[Jinan Gude Electronic Device]
济南固锝电子器件有限公司
Jinan Gude Electronic Device Co., Ltd.
娴???洪??靛??ㄤ欢??????
http://
Jinan Gude Electronic D...
|
| 0707332 |
Header, nominal current: 12 A, rated voltage: 320 V, pitch: 5.08 mm, no. of positions: 12, mounting: Direct mounting - DFK-MSTB 2,5/12-G-5,08
|
Phoenix Contact
|
| KR-1100AAU |
Nominal capacity: 1100mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 19.0mOhm cadnica
|
SANYO
|
| KR-1400AE |
Nominal capacity: 1400mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 10.0mOhm cadnica
|
SANYO
|
| RTM-0505S RTM-2405S RTM-1205S |
25°C, nominal input voltage and rated output current unless otherwise specified
|
Recom International Power
|
| M4A5 M1P5 M1P1 M2G9 M5D1 M5M1 M1F9 M1B5 M5B5 M7P9 |
MEDIUM CURRENT SILICON RECTIFIERS
(M2Kx) MEDIUM CURRENT SILICON RECTIFIERS
Header, Breakaway Vertical; Number of Contacts:2; Pitch Spacing:2.54mm; Number of Rows:1; Gender:Header; Series:42375; Body Material:PA Polyamide
KK 100 Hdr Assy Bkwy 30 Ckt Tin
MEDIUM CURRENT SILICON RECTIFIERS 中型电流硅整
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List of Unclassifed Manufac...
EDAL
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
List of Unclassifed Man...
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| SK5FORTL.ZAHLEN-0804183 SK3FORTL.ZAHLEN-0804183 SK |
Plug component, Nominal current: 12 A, Rated voltage (III/2): 320 V, Number of positions: 4, Pitch: 5mm, Connection method: Screw connection, Color: Black, Contact surface: Tin
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PHOENIX CONTACT
|
| 75730-0104 75730-0106 75730-0108 75730-0110 75730- |
Micro-Max Power垄芒 High-Current Header
Micro-Max Power High-Current Header
|
Molex Electronics Ltd.
|
| D1B0510 D1B051D D1A0510 D1A051D D2A0510 D1B1210 D1 |
Reed relay. Contact form 1B SPST-NC. Nominal voltage (VDC) 5.
Reed relay. Contact form 1A SPST-NO. Nominal voltage (VDC) 5.
Reed relay. Contact form 1B DPST-NO. Nominal voltage (VDC) 5.
Reed relay. Contact form 1B SPST-NC. Nominal voltage (VDC) 12.
Reed relay. Contact form 1B SPDT-CO. Nominal voltage (VDC) 5.
Reed relay. Contact form 1B DPST-NO. Nominal voltage (VDC) 12.
Reed relay. Contact form 1B DPST-NO. Nominal voltage (VDC) 24.
|
Global Components & Controls
|
| 53780-1470 |
Wire-to-Board Header; No. of Contacts:14; Pitch Spacing:1.25mm; No. of Rows:1; Gender:Header; Series:53780; Body Material:PPS Polyphenylene Sulfide; Contact Material:Phosphor Bronze; Current Rating:1A; Housing Style:Right-Angle RoHS Compliant: Yes
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MOLEX INC
|
| ENE201D-05A EN201D-20A EN201D-14A EN201D-05A EN201 |
Z-TRAP ENE(Nominal varistor voltage 200 to 470V 的Z -陷阱迅杰（标称压敏电0070V
OSCILLATORS 100PPM -20 70 3.3V 4 14.31818MHZ TS HCMOS 5X7MM 4PAD SMD 的Z -陷阱迅杰（标称压敏电20070V
Z-TRAP ENE(Nominal varistor voltage 200 to 470V Z -陷阱迅杰（标称压敏电0070V
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FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
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