| PART |
Description |
Maker |
| K7A161830B-QI16 K7A163630B-QC16 K7A161830B-PI25 K7 |
512Kx36 & 1Mx18 Synchronous SRAM
|
Samsung semiconductor
|
| K7B161825A K7A163600A K7A163601A K7B163625A K7A161 |
512Kx36 & 1Mx18 Synchronous SRAM
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 400V; Case Size: 35x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 470uF; Voltage: 250V; Case Size: 25x30 mm; Packaging: Bulk 512Kx36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
ITT, Corp.
|
| AS7C33128PFS32A AS7C33128PFS32A-100TQC AS7C33128PF |
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 36 STANDARD SRAM, 10 ns, PQFP100
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 9 ns, PQFP100
LM4040 Precision Micropower Shunt Voltage Reference; Package: SOT-23; No of Pins: 3; Qty per Container: 3000; Container: Reel 128K X 32 STANDARD SRAM, 8.5 ns, PQFP100
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 36 STANDARD SRAM, 9 ns, PQFP100
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 10 ns, PQFP100
LM4040 Precision Micropower Shunt Voltage Reference; Package: SOT-23; No of Pins: 3; Qty per Container: 1000; Container: Reel 128K X 36 STANDARD SRAM, 8.5 ns, PQFP100
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 12 ns, PQFP100
DIODE ZENER SINGLE 1000mW 18Vz 14mA-Izt 0.05 5uA-Ir 13.7Vr DO41-GLASS 5K/REEL
DIODE ZENER SINGLE 1000mW 18Vz 14mA-Izt 0.05 5uA-Ir 13.7Vr DO41-GLASS 5K/AMMO
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| WEDPY256K72V-133BC WEDPY256K72V-133BI WEDPY256K72V |
256Kx72 Synchronous Pipeline SRAM
|
White Electronic Designs Corporation
|
| 7C33128PFS36A |
3.3V 128K x 32/36 pipeline burst synchronous SRAM
|
Alliance Semiconductor
|
| IS61SP6464-117TQ IS61SP6464-117TQI IS61SP6464-133P |
64K x 64 SYNCHRONOUS PIPELINE STATIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| WED2DL32512V38BC WED2DL32512V40BI WED2DL32512V40BC |
512Kx32 Synchronous Pipeline Burst SRAM
|
WEDC[White Electronic Designs Corporation]
|
| WEDPZ512K72V-150BI WEDPZ512K72V-150BM WEDPZ512K72V |
512K x 72 Synchronous Pipeline Burst ZBL SRAM
|
WEDC[White Electronic Designs Corporation]
|
| IS61SPS51218T-133TQI IS61SPS51218T-150TQ IS61SPS51 |
512K X 18 CACHE SRAM, 3.8 ns, PBGA119
512K x 18 synchronous pipeline, single-cycle deselect static RAM
256K x 32 synchronous pipeline, single-cycle deselect static RAM
256K x 36 synchronous pipeline, single-cycle deselect static RAM
256K X 36 CACHE SRAM, 4 ns, PQFP100
512K X 18 CACHE SRAM, 4 ns, PQFP100
|
Integrated Silicon Solution Inc
|
| AS4C32M16D1A AS4C32M16D1A-5TCN AS4C32M16D1A-5TIN A |
32M x 16 bit DDR Synchronous DRAM
Internal pipeline architecture
|
Alliance Semiconductor ...
|
