PART |
Description |
Maker |
HIP0061 HIP0061AS1 HIP0061AS2 |
60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array 60V/ 3.5A/ 3-Transistor Common Source ESD Protected Power MOSFET Array 60V 3.5A 3-Transistor Common Source ESD Protected Power MOSFET Array
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INTERSIL[Intersil Corporation]
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M54583 M54583P M54583PNBSP |
From old datasheet system M54583P Darlington Transistor Array 8 UNIT 400MA DARLINGTON TRANSISTOR ARRAY
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Mitsubishi Electric Corporation Mitsubishi Electronics America Inc Mitsubishi Electric Semiconductor
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BC807U |
General Purpose Transistors - PNP Silicon AF Transistor Array for AF input stages and drivers PNP Silicon Transistor Array
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INFINEON[Infineon Technologies AG]
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AP0130 AP0130NA AP0130NB AP0130ND AP0132ND AP0132N |
ER 7C 7#16S PIN RECP AB 5C 5#12 PIN RECP 8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 15 mA, 320 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 8通道阵列单片功率MOSFET N沟道增强模式 8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 15 mA, 160 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 15 mA, 300 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 200 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET AB 5C 5#12 SKT RECP 8通道阵列单片功率MOSFET N沟道增强模式
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SUTEX[Supertex Inc] Supertex Inc SUTEX[Supertex, Inc] Supertex, Inc.
|
VN0104N6 |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 40V V(BR)DSS | 560MA I(D) | DIP 晶体管| MOSFET的|阵| N沟道| 40V的五(巴西)直| 560MA(丁)|双酯
|
Supertex, Inc.
|
CA3096_04 CA3096 CA3096A CA3096AE CA3096AM CA3096A |
NPN/PNP Transistor Array, High Voltage, Enhanced Icbo, Iceo and Vce(sat) NPN/PNP Transistor Array, High Voltage, General Purpose, Relaxed Parameters NPN/PNP Transistor Arrays 50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-012AC 50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-001BB
|
INTERSIL[Intersil Corporation]
|
HS-6254RH |
NPN Transistor Array, 5 NPN Array, 8GHz, 3.5dB Noise Figure, Rad-Hard
|
Intersil
|
PE84140_06 84140-00 84140-01 84140-02 PE84140 PE84 |
Ultra-High Linearity Broadband Quad MOSFET Array 0 MHz - RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array
|
Peregrine Semiconductor, Corp. PEREGRINE[Peregrine Semiconductor Corp.]
|
TH3L20 TH3J10 TH3C10 TH3L10 |
TRANSISTOR,BJT,ARRAY,DARLINGTON,200V V(BR)CEO,3A I(C),SIP TRANSISTOR,BJT,ARRAY,DARLINGTON,100V V(BR)CEO,3A I(C),SIP High Voltage / High Speed Switching Transistors From old datasheet system
|
Shindengen Electric Mfg
|
UPA1552H |
MOS FIELD EFFECT POWER TRANSISTOR ARRAY (FAST SWITCHING N-CHANNEL SILICON POWER MOS FET ARRAY)
|
NEC
|
LS4D28-100-RN LS4D28-270-RN LS4D28-271-RN LS4D28-3 |
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.2 V, Enhancement Mode, 8L SOIC, EPAD Enabled 1 ELEMENT, 3.9 uH, GENERAL PURPOSE INDUCTOR, SMD Surface Mount Power Inductors 1 ELEMENT, 12 uH, GENERAL PURPOSE INDUCTOR, SMD Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.0 V, 8L PDIP, EPAD Enabled Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.4 V, Enhancement Mode, 8L PDIP, EPAD Enabled Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= 1.4 V, 16L SOIC, EPAD Enabled Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= 1.4 V, 16L PDIP, EPAD Enabled
|
http:// ICE Components, Inc. ICE COMPONENTS INC
|
2SK1547 2SK947 2SK903 |
MOSFET Transistor TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,12A I(D),TO-220AB TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,4A I(D),TO-220
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Fuji Electric Fuji Semiconductors, Inc.
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