| PART |
Description |
Maker |
| FDA24N50 |
500V N-Channel MOSFET N-Channel MOSFET; Package: TO-3PN; No of Pins: 3; Container: Rail 24 A, 500 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel MOSFET 500V, 24A, 0.19ヘ
N-Channel MOSFET 500V, 24A, 0.19Ω
|
Fairchild Semiconductor, Corp.
|
| MIC94030 MIC94030BM4 MIC94031BM4 4030B MIC94031 |
TinyFET P-Channel MOSFET(TinyFET???P娌??澧?己??OS?烘?搴??)
TinyFETP-Channel MOSFET Preliminary Information TinyFETP沟道MOSFET的初步信
10000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN
TinyFET P-Channel MOSFET(TinyFET技P沟道增强型MOS场效应管)
TinyFET P-Channel MOSFET Preliminary Information
TinyFET⑩ P-Channel MOSFET Preliminary Information
TinyFET?/a> P-Channel MOSFET Preliminary Information
|
Micrel Semiconductor, Inc.
Micrel Semiconductor,Inc.
MICREL[Micrel Semiconductor]
|
| OM6215SS OM6214SS OM6216SS OM6217SS |
30 A, 100 V, 0.065 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
TWO POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE
100V Dual N-Channel MOSFET in a S-6 package
400V Dual N-Channel MOSFET in a S-6 package
500V Dual N-Channel MOSFET in a S-6 package
200V Dual N-Channel MOSFET in a S-6 package
|
List of Unclassifed Manufacturers
ETC
International Rectifier
|
| FDW2515N FDW2515NZ |
CAP CER 68000PF 100V 10% X7R1210 5.8 A, 20 V, 0.028 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Common Drain N-Channel 2.5V specified PowerTrench MOSFET
Dual N-Channel 2.5V Specified PowerTrench MOSFET
|
Glenair, Inc.
FAIRCHILD[Fairchild Semiconductor]
|
| IRFP443R IRFF430R IRF731R IRF732R IRFP442R IRFP342 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 500MA I(D) | TO-250VAR
Rugged Series Power MOSFETs - N-Channel
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.75A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7.7A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 8.7A I(D) | TO-247AC
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 10A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.3A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6.8A I(D) | TO-247 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 6.8AI（四）|47
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.4A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 5.4AI（四）|04AA
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 4A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.25A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 450V五（巴西）直| 2.25AI（四）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 1.35A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 1.35AI（四）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4A I(D) | TO-204AA
|
International Rectifier, Corp.
Intersil, Corp.
Infineon Technologies AG
Fairchild Semiconductor, Corp.
|
| SUP75N05-06 SUB75N05-06 |
N-Channel 50-V (D-S), 175C MOSFET
N-Channel MOSFET
N-Channel 50-V (D-S), 175C MOSFET
N-Channel Enhancement-Mode Trans
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| SUP75N06-08 SUB75N06-08 |
N-Channel 60-V (D-S), 175C MOSFET
N-Channel MOSFET
N-Channel 60-V (D-S), 175C MOSFET
N-Channel Enhancement-Mode Trans
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| AP4525GEH |
30V N-Channel PowerTrench MOSFET 15 A, 40 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| IRFP040 IRF9622 IRF9612 IRFP362 IRFP343 |
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 8.4A I(D) | TO-247AC
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 1.5A I(D) | TO-220AB 晶体管| MOSFET的| P通道| 200伏五（巴西）直| 1.5AI（四）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 900MA I(D) | TO-220AB
TRANSISTOR|MOSFET|P-CHANNEL|200VV(BR)DSS|1.5AI(D)|TO-220AB
TRANSISTOR|MOSFET|N-CHANNEL|50VV(BR)DSS|40AI(D)|TO-247AC
|
International Rectifier, Corp.
|
