| PART |
Description |
Maker |
| UPD424210G5-60-7JF UPD424210G5-60-7JF-G UPD424210L |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
FIBOX
|
| IBM015160NJ3A-60 IBM015161NJ3A-60 |
x16 Fast Page Mode DRAM
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Optrex America, Inc.
|
| GM71VS65163CLT-6 GM71VS65163CLJ-5 GM71VS65163CLJ-6 |
x16 EDO Page Mode DRAM
|
|
| HY5118164CSLTC-80 HY5118164CTC-70 HY5118164CSLJC-7 |
x16 EDO Page Mode DRAM
|
|
| HM514265DLJ-5 HM514265DLJ-7 HM514265DJ-6R HM514265 |
x16 EDO Page Mode DRAM
Plastic internal molding, Noise prevention, Small and lightweight interface; HRS No: 112-0076-0 71; Contact Mating Area Plating: Tin x16 EDO公司页面模式的DRAM
|
Cinch Connectors
|
| AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
x16 EDO Page Mode DRAM
|
Alliance Semiconductor
|
| IS41LV16100A-60TI IS41LV16100A-60K IS41LV16100A-50 |
RES 0805 1/8W 5% 2.4K 1M X 16 EDO DRAM, 60 ns, PDSO44
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO42
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO42
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| IS41LV16100-50T IS41LV16100-50KI IS41LV16100-50TL |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO44
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO42
|
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| IS41C85120-60K IS41C85120-60KI IS41C85120-35K IS41 |
512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 512K X 8 EDO DRAM, 60 ns, PDSO28
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41 |
x32 EDO Page Mode DRAM X32号，江户页面模式的DRAM
256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位），江户内存3.3伏，100/83/66兆赫.3伏，100/83/66兆赫56K × 32带扩展数据输出动态内存）
256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
|
Integrated Silicon Solution, Inc.
|
| MSM5116405C MSM5116405C-50TS-L |
4M X 4 EDO DRAM, 50 ns, PDSO24
4M×4 Dynamic RAM(4M×4动态RAM) 4米4动态RAM米4动态内存）
From old datasheet system
4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
|
OKI ELECTRIC INDUSTRY CO LTD
OKI SEMICONDUCTOR CO., LTD.
|
