| PART |
Description |
Maker |
| IRFZ46N-002 E-018 IRF540N-006 IRF540N-004 IRF540N- |
46 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 60 V, 0.023 ohm, N-CHANNE
81 A, 60 V, 0.012 ohm, N-CHANNE
27 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
72 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
98 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
21 A, 150 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
46 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
VISHAY INTERTECHNOLOGY INC
|
| FCB20N60F12 |
600V N-Channe MOSFET 600V, 20A, 190mΩ
|
Fairchild Semiconductor
|
| CE2766 |
6-Channe Audio DAC
|
CEI
|
| IXTL15N20 IXTL8P40 IXTL5N65 IXTL5P40 IXTL6N60 IXTM |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 8A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 5A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-204AC
TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 24A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-218VAR
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 6A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 10A I(D) | TO-254 晶体管| MOSFET的| P通道| 200伏五（巴西）直| 10A条（丁）|254
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 5A I(D) | TO-254 晶体管| MOSFET的| N沟道|650V五（巴西）直| 5A条（丁）|54
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-3 晶体管| MOSFET的| P通道| 150伏五（巴西）直| 7A条（丁）|
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-210AC 晶体管| MOSFET的| N沟道| 500V五（巴西）直|3A条（丁）|10AC
TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-220 晶体管| MOSFET的| P通道| 500V五（巴西）直| 5A条（丁）|220
|
MITSUMI ELECTRIC CO., LTD.
Infineon Technologies AG
HIROSE ELECTRIC Co., Ltd.
|
| IXTL13N65 IXTH24N45 IXTL18N50 IXTL24N40 IXTH21N45 |
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 13A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 24A I(D) | TO-218VAR
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 18A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 24A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 21A I(D) | TO-218VAR 晶体管| MOSFET的| N沟道| 450V五（巴西）直| 21A条（丁）|18VAR
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 18A I(D) | TO-3 晶体管| MOSFET的| N沟道|650V五（巴西）直| 18A条（丁）|
|
IXYS, Corp.
|
| 2SK2432 2SK2619 2SK2636 2SK2403 2SJ454 2SK2404 2SK |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 7A I(D)
TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 5A I(D)
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 5A I(D)
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 16A I(D) 晶体管| MOSFET的| N沟道| 250V五（巴西）直| 16A条（丁）
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 6A I(D) | TO-262AA 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 6A条（丁）|62AA
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 20A I(D) 晶体管| MOSFET的| N沟道| 450V五（巴西）直| 20A条（丁）
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
Sanyo Electric Co., Ltd.
|
| SST5460 SST5462 SST5461 2N5462 2N5460 2N5461 |
P-CHANNEL JFETS
MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:6.2A; Current, Idm pulse:30A; Power, Pd:1.5W; Resistance, Rds on:0.024R; SMD:1; Charge, gate
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL
SIPMOS垄莽 Power-Transistor
SIPMOS庐 Power-Transistor
SIPMOS? Power-Transistor
SIPMOS㈢ Power-Transistor
|
Infineon Technologies AG
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
| FS5VSJ06 FS30UMJ06 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-263AB
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 30A条（丁）| TO - 220AB现有
|
Powerex, Inc.
|
|
