| PART |
Description |
Maker |
| K4R441869A-NM K4R441869A-MCK8 K4R441869A-NCK7 |
8M X 18 DIRECT RAMBUS DRAM, 45 ns, PBGA62
K4R271669A-N(M):Direct RDRAMData Sheet
|
Samsung Electronic
|
| MC-4R256FKE8S-840 |
Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT) 128M X 18 DIRECT RAMBUS DRAM MODULE, DMA160
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| MC-4R128CPE6C-653 MC-4R128CPE6C-745 MC-4R128CPE6C- |
64M X 16 DIRECT RAMBUS DRAM MODULE, 1.5 ns, DMA184
Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT)
Direct Rambus垄芒 DRAM RIMM垄芒 Module 128M-BYTE (64M-WORD x 16-BIT)
|
ELPIDA MEMORY INC
|
| W23402 W234 W234X |
Dual Direct Rambus™ Clock Generator
Dual Direct Rambus垄芒 Clock Generator
Dual Direct Rambus Clock Generator
|
Cypress Semiconductor
|
| KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| VSB06P6.5LCI VSB06P12LCI VSB06P05LCI |
Direct ProTek Replacement:VSB06P12LCI
Direct ProTek Replacement:VSB06P05LCI 直接太克替代：VSB06P05LCI
Direct ProTek Replacement:VSB06P6.5LCI 直接太克替代：VSB06P6.5LCI
|
Microchip Technology, Inc.
Vishay Intertechnology, Inc.
|
| UPD488448 UPD488448FB-C60-53-DQ1 UPD488448FB-C60-5 |
128 M-bit Direct Rambus⑩ DRAM
128 M-bit Direct Rambus DRAM
|
NEC[NEC]
|
| APC1 |
Attachment accessories
|
Lumins Inc.
|
| APA1 APS1 |
Attachment accessories
|
Lumins Inc.
|
| D00230 |
Right Angle Drill Attachment
|
List of Unclassifed Man...
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