| PART |
Description |
Maker |
| 710-859 |
Direct Attachment Guardian Double-Y Transition For Series 72 Annular Convoluted Tubing
|
Glenair, Inc.
|
| GEM354-LG2 |
Controllers, Guardian Enclosure Management Controller
|
Qlogic Corporation
|
| C460DA1000-0327 C460DA1000-0325 C460DA1000-0311 C4 |
Direct Attach LED Technology Rectangular LED RF Performance
LEDs
Direct Attach DA1000 LEDs
|
Cree, Inc
Marktech Corporate
|
| MC-4R128CEE6C-845 MC-4R128CEE6B MC-4R128CEE6B-653 |
64M X 16 DIRECT RAMBUS DRAM MODULE, 53 ns, DMA184
Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
|
NEC Corp.
NEC[NEC]
|
| MC-4R128FKK8K-840 MC-4R128FKK8K |
128MB 32-bit Direct Rambus DRAM RIMM Module 128MB2位直接Rambus的内存RIMM的模
128MB 32-bit Direct Rambus DRAM RIMM Module 64M X 18 DIRECT RAMBUS DRAM MODULE, DMA232
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| HYR1612820 HYR183220G-840 HYR1612820G-653 HYR18642 |
Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) 直接的RDRAM RIMM的模块（44兆RDRAMs
CONN HEADER .100 DUAL STR 72POS
CONN HEADER .100 DUAL R/A 72POS
128M X 16 DIRECT RAMBUS DRAM MODULE, 2.06 ns, DMA184
|
INFINEON[Infineon Technologies AG]
|
| K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MC-4R64FKE8S-840 |
Direct Rambus DRAM SO-RIMM Module 32M X 18 DIRECT RAMBUS DRAM MODULE, 40 ns, DMA160
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| UPD488448FB-C71-45-DQ1 UPD488448FB-C60-53-DQ1 UPD4 |
128 M-bit Direct Rambus??DRAM
128 M-bit Direct RambusDRAM
128 M-bit Direct Rambus?/a> DRAM
128 M-bit Direct Rambus DRAM
|
NEC Corp.
|
| APA1 APS1 |
Attachment accessories
|
Lumins Inc.
|
| 364424B00032 |
TAPE Attachment Method
|
AAVID[Aavid Thermalloy, LLC]
|
