PART |
Description |
Maker |
2SK3781-01R |
DIODE SCHOTTKY SINGLE 25V 200mW 0.33V-vf 200mA-IFM 2mA-IF 0.5uA-IR SOD-323 3K/REEL 73 A, 200 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET N-CHANNEL SILICON POWER MOSFET
|
Fuji Electric Holdings Co., Ltd. FUJI[Fuji Electric]
|
FDU8780 FDU8780F071 FDD8780 |
N-Channel PowerTrench® MOSFET 25V, 35A, 8.5mOhms N-Channel PowerTrench MOSFET 25V, 35A,8.5mOhms N-Channel PowerTrench㈢ MOSFET 25V, 35A, 8.5mOhm N-Channel PowerTrench? MOSFET 25V, 35A, 8.5mOhm
|
Fairchild Semiconductor
|
IRLU8259 IRLR8259TRLPBF |
25V Single N-Channel HEXFET Power MOSFET in a I-Pak package 25V Single N-Channel HEXFET Power MOSFET in a D-Pak package
|
International Rectifier
|
IRFH4226 |
25V Single N-Channel HEXFET Power MOSFET in a PQFN 5 x 6 B package
|
International Rectifier
|
IPU07N03LA |
OptiMOS®2 - Power packages OptiMOS2 Power MOSFET. 25V. TO251. RDSon = 6.5mOhm. 30A. LL ?的OptiMOS功率MOSFET25V的TO251。导通状态\u003d 6.5mOhm30A条。当地雇员?
|
Infineon Toshiba, Corp.
|
IRFH8201TRPBF |
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
|
International Rectifier
|
IRFH4210 |
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
|
International Rectifier
|
IRFH4213D |
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
|
International Rectifier
|
IPD06N03LA IPU06N03LA |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 25V, TO251, RDSon = 5.9mOhm, 50A, LL OptiMOS 2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
IPF04N03LA |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 25V, Reverse D-PAK, RDSon = 4.1mOhm, 50A, LL OptiMOS 2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|