| PART |
Description |
Maker |
| IRF7452QPBF10 |
HEXFETPower MOSFET
|
International Rectifier
|
| IRF7103QPBF |
AUTOMOTIVE MOSFET HEXFETPower MOSFET ㈢汽车的HEXFET MOSFET的功率MOSFET
|
International Rectifier, Corp.
|
| IRFZ44ESPBF |
HEXFETPower MOSFET ㈢的HEXFET功率MOSFET
|
International Rectifier, Corp.
|
| IRLM6402GPBF IRLML6402GPBF |
HEXFETPower MOSFET
HEXFET Power MOSFET
|
International Rectifier
|
| IRFZ44VZSPBF |
HEXFETPower MOSFET ( VDSS = 60V , RDS(on) = 12m, ID = 57A )
|
International Rectifier
|
| IRLML2244TRPBF |
HEXFETpower MOSFET RoHS compliant containing no lead, no bromide and no halogen
|
TY Semiconductor Co., Ltd
|
| IRLML0040TRPBF |
HEXFETpower MOSFET Compatible with existing Surface Mount Techniques Lower switching losses
|
TY Semiconductor Co., Ltd
|
| AQS610TSX AQS610TSZ |
PhotoMOS relay, GU (general use) type, multi-function (1a1b MOSFET & optocoupler). Output rating load voltage 350V AC/DC, load current 100 mA.
|
Matsushita Electric Works(Nais)
|
| FTD2017 |
Load Switching Applications 负荷开关应
N-Channel Silicon MOSFET Load Switching Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| NTGD1100LT1G NTGD1100LT1 NTGD1100L |
Power MOSFET 8 V, .3 A, Load Switch with Level−Shift, P−Channel, TSOP−6 3300 mA, 8 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Power MOSFET 8 V, ?.3 A, Load Switch with Level−Shift, P−Channel, TSOP−6
Power MOSFET 8 V, ?.3 A, Load Switch with Level−Shift, P−Channel, TSOP−6
|
ONSEMI[ON Semiconductor]
|
| ISL6622A ISL6610 ISL6610A ISL6612 ISL6612A ISL6614 |
VR11.1, 4-Phase PWM Controller with Light Load Efficiency Enhancement and Load Current Monitoring
|
Intersil Corporation
|
| FTD2022 |
N-Channel Silicon MOSFET Load Switching Applications
|
SANYO[Sanyo Semicon Device]
|
