| PART |
Description |
Maker |
| H27UBG8T2BTR-BC H27UCG8U5BTR-BC |
32Gb(4096M x 8bit) Legacy MLC NAND Flash
|
Hynix
|
| ESD55C104K4Z2A-18 |
ESD Withstanding MLC Capacitor
|
AVX Corporation
|
| MT29F8G08MAAWC MT29F8G08MAAWP |
NAND Flash Memory MLC
|
Micron
|
| 1206SXXX 1808AXXX 2225AXXX 2220GXXX 1825CXXX 2220H |
High Voltage MLC Chips
|
AVX Corporation
|
| KM48S8030D KM48S8030DT-GFA KM48S8030DT-GFL KM48S80 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 125MHz
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 133MHz
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL 64Mbit SDRAM00万8位4银行同步DRAM LVTTL
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| RMM |
RoHS Compliant SMPS Stacked MLC Capacitors (RMM Style) Extended Range
|
AVX Corporation
|
| K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| NZG10-2M |
Legacy 100 Hz to 2 MHz
|
Micronetics, Inc.
|
| NZG100-2M |
Legacy 100 Hz to 2 MHz
|
Micronetics, Inc.
|
