| PART |
Description |
Maker |
| SHB636053E |
HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE 5 A, SILICON CARBIDE, BRIDGE RECTIFIER DIODE
|
Sensitron Semiconductor
|
| SHD619112P |
HERMETIC SILICON CARBIDE RECTIFIER
10 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE
|
SENSITRON SEMICONDUCTOR
|
| SHD618052AN SHD618052AP SHD618052BP SHD618052P SHD |
HERMETIC SILICON CARBIDE RECTIFIER 5 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| SHD617112BN SHD617112BP SHD617112P SHD617112AN SHD |
HERMETIC SILICON CARBIDE RECTIFIER 10 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| 1N5399S 1N5391 1N5391_1 1N5391S 1N5392 1N5392S 1N5 |
RECTIFIER STANDARD SINGLE 1.5A 200V 200 50A-ifsm 5uA-ir 1.1V-vf DO-15 4K/REEL-13
RECTIFIER STANDARD SINGLE 1.5A 100V 100 50A-ifsm 5uA-ir 1.1V-vf DO-15 1K/BULK
RECTIFIER STANDARD SINGLE 1.5A 600V 600 50A-ifsm 5uA-ir 1.1V-vf DO-15 4K/REEL-13 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-15
RECTIFIER STANDARD SINGLE 1.5A 50V 50 50A-ifsm 5uA-ir 1.1V-vf DO-41 5K/AMMO 1.5 A, 50 V, SILICON, RECTIFIER DIODE, DO-41
RECTIFIER STANDARD SINGLE 1.5A 800V 800 50A-ifsm 5uA-ir 1.1V-vf DO-41 5K/AMMO 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-41
1.5A RECTIFIER
|
Diodes, Inc.
DIODES[Diodes Incorporated]
|
| RS2X-13-F RS2XA-13-F RS2D-13-F RS2JA-13-F RS2K-13- |
RECTIFIER FAST-RECOVERY SINGLE 1.5A 200V 50A-ifsm 1.3V-vf 150ns 5uA-ir SMB 5K/REEL-13 1.5 A, 200 V, SILICON, RECTIFIER DIODE
RECTIFIER FAST-RECOVERY SINGLE 1.5A 600V 50A-ifsm 1.3V-vf 250ns 5uA-ir SMA 5K/REEL-13 1.5 A, 600 V, SILICON, RECTIFIER DIODE
RECTIFIER FAST-RECOVERY SINGLE 1.5A 800V 50A-ifsm 1.3V-vf 500ns 5uA-ir SMB 5K/REEL-13 1.5 A, 800 V, SILICON, RECTIFIER DIODE
1.5A SURFACE MOUNT FAST RECOVERY RECTIFIER 1.5 A, 50 V, SILICON, RECTIFIER DIODE
|
Diodes Incorporated
Diodes, Inc.
|
| SDP10S30 SDB10S30SMD SDT10S30 |
Silicon Carbide Schottky Diodes - 10A diode in TO220-3 package
Silicon Carbide Schottky Diodes - 10A diode in TO263 package
Silicon Carbide Schottky Diodes - 10A diode in TO220-2 package
|
Infineon
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| GA50JT06-CAL-15 |
OFF Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
| GC08MPS12-220 |
Silicon Carbide Schottky Diode
|
GeneSiC Semiconductor, ...
|
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