| PART |
Description |
Maker |
| STU4N62K3 STP4N62K3 STI4N62K3 STF4N62K3 STFI4N62K3 |
N-channel 620 V, 1.7 Ohm typ., 3.8 A, SuperMESH3(TM) Power MOSFET in I2PAK package
N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3 Power MOSFET
|
ST Microelectronics
STMicroelectronics
|
| STF6N62K3 STP6N62K3 STI6N62K3 STFI6N62K3 STU6N62K3 |
N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in I2PAKFP package
N-channel 620 V, 0.95 Ω typ., 5.5 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220, IPAK packages
N-channel 620 V, 0.95 Ω typ., 5.5 A SuperMESH3 Power MOSFET in TO-220FP, I2PAKFP, I2PAK, TO-220, IPAK packages
|
STMicroelectronics
STATEK CORPORATION
ST Microelectronics
|
| STF6N62K3045Y |
N-channel 620 V, 0.95 Ohm typ., 5.5 A MDmesh K3 Power MOSFET in TO-220FP narrow leads package
|
ST Microelectronics
|
| STB4N62K3 STD4N62K3 |
N-channel 620 V, 1.7 Ω, 3.8 A SuperMESH3 Power MOSFET
|
STMicroelectronics
|
| STP17N62K3 |
15 A, 620 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
STMICROELECTRONICS
|
| STW57N65M5 STI57N65M5 STP57N65M5 STB57N65M5 |
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh(TM) V Power MOSFET in D2PAK package
N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET
N-channel 650 V, 0.056 Ω typ., 42 A MDmesh V Power MOSFET in I2PAK, TO-220, TO-220FP and D2PAK packages
|
ST Microelectronics
STMicroelectronics
|
| CAT28C65ANI-20 CAT28C65AKI-20 CAT28C65AJ-15 CAT28C |
128Kx8 EEPROM
2400 MHz to 2700 MHz; Package: PG:H-30256-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 2,420.0 - 2,480.0 MHz; P1dB (typ): 45.0 W; Supply Voltage: 28.0 V;
2400 MHz to 2700 MHz; Package: PG: H-30248-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 2,500.0 - 2,700.0 MHz; P1dB (typ): 85.0 W; Supply Voltage: 28.0 V;
2400 MHz to 2700 MHz; Package: PG: H-30260-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 2,620.0 - 2,680.0 MHz; P<sub>1dB</sub> (typ): 130.0 W; Supply Voltage: 28.0 V; x8的EEPROM
2400 MHz to 2700 MHz; Package: PG: H-31260-2; Flange Type: Earless; Matching: I/O; Frequency Band: 2,420.0 - 2,480.0 MHz; P<sub>1dB</sub> (typ): 130.0 W; Supply Voltage: 28.0 V; x8的EEPROM
|
NXP Semiconductors N.V.
ZETTLER electronics GmbH
|
| S2744 S2744-08 S2744-09 S3588-08 S3588-09 |
MOSFET, Switching; VDSS (V): 150; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.089; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
Si PIN photodiode Large area sensors for scintillation detection 硅PIN光电二极管的大面积闪烁探测传感器
|
Hamamatsu Photonics K.K.
|
| S5573 |
MOSFET, Switching; VDSS (V): 600; ID (A): 30; Pch : 200; RDS (ON) typ. (ohm) @10V: 0.2; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
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