| PART |
Description |
Maker |
| CY7C1383B-117AC CY7C1383B-117BZC CY7C1383B-117BGC |
512 × 36/1M × 18 Flow-Thru SRAM
|
Cypress Semiconductor
|
| CY7C1381D-133AXI CY7C1381D-100AXC CY7C1381D-100BZI |
18 Mbit (512 K ? 36/1 M ? 18) Flow Through SRAM
18 Mbit (512 K × 36/1 M × 18) Flow Through SRAM
|
Cypress Semiconductor
|
| CY7C1361C-133AJXCT |
9-Mbit (256 K 36/512 K 18) Flow-Through SRAM
|
Cypress
|
| CY7C1373D-100AXC CY7C1373D-133BZI CY7C1371D-133BGC |
18-Mbit (512 K × 36/1 M × 18) Flow-Through SRAM with NoBL Architecture
|
Cypress Semiconductor
|
| GS8322Z18B-166I GS8322Z18B-225 GS8322Z18B-225I GS8 |
166MHz 8.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM
225MHz 6.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM
133MHz 11ns 2M x 18 36Mb NBT pipelined/flow through SRAM
150MHz 10ns 2M x 18 36Mb NBT pipelined/flow through SRAM
200MHz 7.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM
|
GSI Technology
|
| R1LP0408C R1LP0408CSB-5SI R1LP0408CSB-7LI R1LP0408 |
Wide Temperature Range Version 4 M SRAM (512-kword ??8-bit)
R1LP0408C-I Series Datasheet 78K/AUG.01.03
Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword 】 8-bit)
Memory>Low Power SRAM
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Renesas
|
| CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的（256 × 36/512K × 18）流体系结构，通过与总线延迟静态存储器
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IC61SF25636T IC61SF25636D IC61SF25632T IC61SF25632 |
SYNCHRONOUS STATIC RAM, Flow Through
From old datasheet system
8Mb SyncBurst Flow through SRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| HM62W8512BLFP-5 HM62W8512BLFP-5SL HM62W8512BLFP-5U |
512K X 8 STANDARD SRAM, 55 ns, PDSO32
4 M SRAM (512-kword ? 8-bit)
4 M SRAM (512-kword 垄楼 8-bit)
4 M SRAM (512-kword ′ 8-bit)
|
Renesas Electronics Corporation
|
| GS8162Z72C-150I GS8162Z18B-250I GS8162Z18B-200I GS |
18Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 72 ZBT SRAM, 7.5 ns, PBGA209
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 5.5 ns, PBGA119
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 6.5 ns, PBGA119
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 6 ns, PBGA119
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 7 ns, PBGA165
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 5.5 ns, PBGA165
18Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 72 ZBT SRAM, 6.5 ns, PBGA209
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 8.5 ns, PBGA165
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 7.5 ns, PBGA119
|
GSI Technology, Inc.
|
| 7C1351-66 7C1351-40 7C1351-50 CY7C1351-66AC |
128Kx36 Flow-Through SRAM with NoBL TM Architecture 128K × 36至流通过与总线延迟TM架构的SRAM
128Kx36 Flow-Through SRAM with NoBL TM Architecture 128K X 36 ZBT SRAM, 11 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
