| PART |
Description |
Maker |
| HY628100BLLG-70 |
IC-SMD-SRAM 1MB 集成电路贴片静态存储器1MB
|
Hynix Semiconductor, Inc.
|
| MT58L64L18F MT58L32L32F MT58L32L36F |
32K x 323.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM)
32K x 363.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出，流通式同步脉冲静态RAM)
64K x 18, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM) 64K的18.3V的I / O的流量通过SyncBurst的SRAM兆，3.3V的输输出，流通式同步脉冲静态内存）
|
Micron Technology, Inc.
|
| GS71116J-12I GS71116TP-12I GS71116TP-15I GS71116TP |
15ns 64K x 16 1Mb asynchronous SRAM
10ns 64K x 16 1Mb asynchronous SRAM
12ns 64K x 16 1Mb asynchronous SRAM
|
List of Unclassifed Manufacturers
ETC[ETC]
GSI Technology
|
| GS71116ATP GS71116ATP-10 GS71116ATP-10I GS71116ATP |
1Mb Asynchronous SRAM
|
http://
List of Unclassifed Manufacturers
ETC[ETC]
|
| DS2045L |
3.3V Single-Piece 1Mb Nonvolatile SRAM
|
Maxim
|
| GS71116AJ GS71116ATP GS71116AU |
(GS71116x) 64K x 16 1Mb Asynchronous SRAM
|
GSI Technology
|
| CY7C1474BV33-200BGC |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V 1M X 72 ZBT SRAM, 3 ns, PBGA209
|
Cypress Semiconductor, Corp.
|
| L083WC2AT2 |
1Mb Ultra-Low Power Asynchronous CMOS SRAM
|
NanoAmp Solutions, Inc.
|
| HY62VT08081E-DGC HY62VT08081E-DGE HY62VT08081E-DGI |
Low Power Slow SRAM - 256Kb
SWITCH, REED SPST-NO 10W SMD
QSW-REED,10MM,10W,SMD
9 POS FR-4 SIP SOCKET
x8|3V|70/85/100|Low Power Slow SRAM - 256K
x8|3.3V|70/85/100|Low Power Slow SRAM - 256K
32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM
x8 SRAM x8的SRAM
x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28
x8 SRAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28
x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDIP28
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
Analog Devices, Inc.
Panasonic Industrial Solutions
|
| MPC2105A MPC2106ASG66 MPC2105B |
(MPC2105x / MPC2106x) 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 128K X 72 CACHE TAG SRAM MODULE, 9 ns, DMA178
512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 512KBMB的二级缓存模块BurstRAM为PowerPC制备/ CH旺平
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| M36W216TI-ZAT M36W216BIZA M36W216TIZA M36W216TI70Z |
16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product 16兆x16插槽，开机区块快闪记忆体兆位128KB的x16的SRAM，多个存储产
16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product 16兆x16插槽，开机区块快闪记忆体2兆位128KB的x16的SRAM，多个存储产
PV76L14-18P
|
http://
STMicroelectronics N.V.
意法半导
|
| HY62V8100B HY62V8100BLLT1 HY62V8100BLLG-E HY62V810 |
Low Power Slow SRAM - 1Mb
128K x8 bit 3.3V Low Power CMOS slow SRAM
|
HYNIX[Hynix Semiconductor]
|
