| PART |
Description |
Maker |
| NTD5406NT4G NTD5406N |
Power MOSFET, 40 V, 70 A, Single N-Channel
Power MOSFET 40 V, 70 A, Single N-Channel, DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 12.2 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| PT510 PT501 PT510A PT501C PT510C PT501A PT501B |
PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | CAN-4.7 光电晶体管|叩| 800NM峰值波长|的CAN - 4.7
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU2405 with Lead Free Packaging
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRFSL33N15D with Lead Free Packaging
such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.; A IRF6610 with Standard Tape and Reel
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF2805S with Standard Packaging
TO-18 Type Narrow Acceptance Phototransistor
|
Sharp Electrionic Components
|
| MRF9130LSR3 MRF9130L MRF9130LR3 |
LEAD FREE A3932SEQ-T WITH TAPE & REEL UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER FIELD EFFECT TRANSISTORS
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
|
| NTMFS4122N NTMFS4122NT1G NTMFS4122NT3G |
Power MOSFET 30 V, 23 A, Single N-Channel SO-8 Flat Lead; Package: SO8FL / DFN6 5x6, 1.27P; No of Pins: 6; Container: Tape and Reel; Qty per Container: 5000
Power MOSFET 30 V, 23 A, Single N-Channel, SO-8 Flat Lead
Power MOSFET 30 V, 23 A, Single N-Channel SO-8 Flat Lead; Package: SO8FL / DFN6 5x6, 1.27P; No of Pins: 6; Container: Tape and Reel; Qty per Container: 1500 9100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
ON Semiconductor
|
| NCP5351DR2G NCP5351DG NCP5351MNR2G |
5 V, 4 A Synchronous Buck Power MOSFET Driver ; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500 4 A BUF OR INV BASED MOSFET DRIVER, PDSO8
|
ON Semiconductor
|
| NTR1P02T3G |
Power MOSFET -20 V, -1 A, P-Channel SOT-23; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 10000 1000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
ON Semiconductor
|
| FDG6332C FDG6332CNL |
Tantalum Molded Capacitor; Capacitance: 220uF; Voltage: 6.3V; Packaging: Tape & Reel 700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
20V N & P-Channel PowerTrench MOSFETs
20V N &P - Channel Power Trench MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| NTK3043N NTK3043NT1G NTK3043NT5G |
Power MOSFET 20 V, 285 mA, N-Channel with ESD Protection, SOT-723; Package: SOT-723 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 8000 210 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Power MOSFET 20 V, 285 mA, N−Channel with ESD Protection, SOT−723
|
ON Semiconductor
|
| DU1P0-05D05 DU1P0-24S15 DU1P0-05D12 DU1P0-05D15 DU |
1 WATT DC-DC CONVERTER 1瓦的DC - DC转换
Hazard Warning Tape; Width:2"; Roll Length:5yard; Features:Glow-in-the-Dark Arrow Tape - Arrow Style RoHS Compliant: NA 1瓦的DC - DC转换
TAPE, BARRICADE, BLACK/YELLOW STRIPE; Colour:Yellow / Black; Length, tape:100m; Width, tape:75mm RoHS Compliant: NA
SEMICONDUCTOR & CHEMICAL PIPE MARKERS
From old datasheet system
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
Power Mate Technology
|
| LA4100 LA4102 LA4120 LA4125 LA4125T LA4147 LA3600 |
(LA4120 / LA4125) 2-Channel AF Power AMP for Radio Tape Recoder
2-CHANNEL AF POWER AMP, FOR RADIO, TAPE RECORDER
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| HUF75343S3 HUF75343S3S HUF75343G3 HUF75343P3 HUF75 |
75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs 75 A, 55 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 75 A, 55 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
Vishay Intertechnology, Inc.
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