| PART |
Description |
Maker |
| KSY13 KSY13E7502 KSY13-E7502 |
MAGNETIC FIELD SENSOR-HALL EFFECT, 0-100mT, 0.09-0.14V, RECTANGULAR, SURFACE MOUNT
GaAs Hall Sensor with high sensitivit...
|
Infineon Technologies AG
|
| AH1886-ZG-7 |
MAGNETIC FIELD SENSOR-HALL EFFECT, 0.6-5.5mT, 0.2-1.6V, RECTANGULAR, SURFACE MOUNT GREEN, SOT-553, 5 PIN
|
Diodes, Inc.
|
| 65017-001 65017 |
HIGH RELIABILITY HALL EFFECT SENSOR LATCHING OUTPUT MAGNETIC FIELD SENSOR-HALL EFFECT, -10-15mT, 0.40V, RECTANGULAR, THROUGH HOLE MOUNT
|
MICROPAC[Micropac Industries]
Micropac Industries, Inc.
|
| K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/ |
DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 22.1Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 13.79Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 14Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 12.9Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 11.1Vz 10mA-Izt 0.02523 0.1uA-Ir 8.4 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-23 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 12.88Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-363 3K/REEL
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
http://
|
| MLX90242 MLX90242LVA-CC03 |
The MLX90242 is a CMOS Linear Hall Effect sensor IC. It possesses active error correction circuitry
MAGNETIC FIELD SENSOR-HALL EFFECT, -50-50mT, 0.25-4.75V, RECTANGULAR, THROUGH HOLE MOUNT
|
Melexis Microelectronic Sys...
Melexis Microelectronic Systems
Melexis, Inc.
|
| HAL508UA-A HAL523SF-A HAL523SF-K HAL516SF-A HAL516 |
MAGNETIC FIELD SENSOR-HALL EFFECT, -2.3-2.3mT, 0-20mA, RECTANGULAR, THROUGH HOLE MOUNT
MAGNETIC FIELD SENSOR-HALL EFFECT, 20.7-13.5mT, 0-20mA, RECTANGULAR, THROUGH HOLE MOUNT PLASTIC, TO-92UA-1, 3 PIN
Hall-Effect Sensor Family
|
Micronas Semiconductor Holding AG
|
| SS94A2D |
CENTERLINE OF HALL CELL ONLY
MAGNETIC FIELD SENSOR-HALL EFFECT, -250-250mT, 4V, RECTANGULAR, THROUGH HOLE MOUNT
|
Honeywell Solid State Electronics Center
Clarostat
|
| OH10008 |
GaAs Hall Device MAGNETIC FIELD SENSOR-HALL EFFECT, 100-500mT, 0.08-0.13V, SQUARE, SURFACE MOUNT
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| AH477A AH477AZ4-AG1 AH477AZ4-BG1 |
SINGLE PHASE HALL EFFECT LATCH
MAGNETIC FIELD SENSOR-HALL EFFECT, -10-10mT, RECTANGULAR, THROUGH HOLE MOUNT GREEN, TO-94, SIP-4
|
BCD Semiconductor Manufacturing Limited
BCD Semiconductor Manufacturing, Ltd.
|
| OHS3019U OHN3019U |
Hallogic Hall Effect Sensors(Hallogic(R) 霍尔效应传感器，宽电源电压范小封 MAGNETIC FIELD SENSOR-HALL EFFECT, 12.5-50mT, 25mA, RECTANGULAR, THROUGH HOLE MOUNT
HALLOGIC-R HALL EFFECT SENSORS
|
TT electronics OPTEK Technology
OPTEK[OPTEK Technologies]
|
| AH276Z4-BE1 AH276Z4-AE1 AH276Z4-E1 AH276 AH276Z4-C |
COMPLEMENTARY OUTPUT HALL EFFECT LATCH MAGNETIC FIELD SENSOR-HALL EFFECT, -7-7mT, RECTANGULAR, THROUGH HOLE MOUNT
COMPLEMENTARY OUTPUT HALL EFFECT LATCH 互补输出霍尔效应锁存
COMPLEMENTARY OUTPUT HALL EFFECT LATCH MAGNETIC FIELD SENSOR-HALL EFFECT, -5-5mT, RECTANGULAR, THROUGH HOLE MOUNT
|
BCD Semiconductor Manufacturing, Ltd.
BCDSEMI
BCD Semiconductor Manufacturing Limited
|
| AH9249Z3-G1 AH9249Z3TR-G1 AH9249DNTR-G1 AH9249NTR- |
MAGNETIC FIELD SENSOR-HALL EFFECT, -.5-5.5mT, 1mA, RECTANGULAR, THROUGH HOLE MOUNT GREEN, TO-92S,3 PIN
High Sensitivity Micropower Omnipolar Hall-Effect Switch
|
BCD Semiconductor Manufacturing, Ltd.
BCD Semiconductor Manufacturing Limited
|
