| PART |
Description |
Maker |
| 4MBI300VG-120R-50 4MBI450VB-120R1-50 |
Power Devices (IGBT)
|
ETC
|
| TSG25N120CN |
Discrete Devices-IGBT-IGBT
|
Taiwan Semiconductor
|
| CY8C42223-24SXI CY8C42223-24SXIT CY8C42423-24LFXI |
MULTIFUNCTION PERIPHERAL, PDSO8
Power PSoC?/a> Devices
Power PSoC Devices
|
CYPRESS SEMICONDUCTOR CORP
http://
|
| FZ1200R12KL4C |
IGBT-Wechselrichter / IGBT-inverter
IGBT Power Module
|
eupec GmbH
|
| BSM400GA120DL 400A12L C67076-A2302-A70 |
IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes) 680 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MG600J2YS60A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| 2ED020I12-F |
Dual IGBT Driver IC for eupec Low and Medium Power IGBT Modules
|
eupec GmbH
|
| CM150DU-12F |
IGBT MODULES HIGH POWER SWITCHING USE
150 A, 600 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| APT40GP90J |
MOSFET
POWER MOS 7 IGBT
68 A, 900 V, N-CHANNEL IGBT ISOTOP-4
|
ADPOW[Advanced Power Technology]
Advanced Power Electronics, Corp.
|
| APT45GP120B2DQ2 APT45GP120B2DQ2G |
113 A, 1200 V, N-CHANNEL IGBT
POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
| APTGT300H60G |
Full - Bridge Trench Field Stop IGBT Power Module 430 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| APTGT150DH170G |
Asymmetrical - Bridge Trench Field Stop IGBT Power Module 250 A, 1700 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
