| PART |
Description |
Maker |
| DSBT2-S-2D-DC5V DSBT2-S-2D-DC9V DSBT2-S-2D-DC6V DS |
4000 V BREAKDOWN VOLTAGE DS RELAYS
4,000 V BREAKDOWN VOLTAGE DS RELAYS 4000击穿电压继电器局副局
|
NAIS[Nais(Matsushita Electric Works)]
ETC[ETC]
Matsushita Electric Works(Nais)
Hamamatsu Photonics K.K.
|
| TX2-5V TX2-12V TX2-3V TX2-L-1.5V TX2-48V TX2-L2-H- |
2 A CAPACITY RELAY WITH HIGH SURGE VOLTAGE & HIGH BREAKDOWN VOLTAGE 2阿继电器容量高浪涌电
RELAY, SOLID STATE 40A 240VAC
FILM/M CAPACITANCE=0.1 VOLT=63
2 A CAPACITY RELAY WITH HIGH SURGE VOLTAGE & HIGH BREAKDOWN VOLTAGE
|
Nais(Matsushita Electric Wo...
Panasonic, Corp.
YEONHO Electronics Co., Ltd.
NAIS[Nais(Matsushita Electric Works)]
http://
|
| LM4040AIM3-2.1-T LM4040AIM3-2.5-T LM4040AIM3-3.0-T |
2.048 V, improved precision micropower shunt voltage reference with multiple reverse breakdown voltage
2.5 V, improved precision micropower shunt voltage reference with multiple reverse breakdown voltage
3.0 V, improved precision micropower shunt voltage reference with multiple reverse breakdown voltage
4.096 V, improved precision micropower shunt voltage reference with multiple reverse breakdown voltage
5.0 V, improved precision micropower shunt voltage reference with multiple reverse breakdown voltage
3.3 V, improved precision micropower shunt voltage reference with multiple reverse breakdown voltage
|
MAXIM - Dallas Semiconductor
|
| PS7141L-2B PS7141L-1B-E3 PS7141L-1B-E4 PS7141L-1B |
6 AND 8 PIN DIP 400 V BREAKDOWN VOLTAGE NORMALLY CLOSED TYPE 1-CH, 2-CH OPTICAL COUPLED MOSFET 6引脚DIP00击穿电压通常闭式1通道通道光学耦合MOSFET
6 AND 8 PIN DIP 400 V BREAKDOWN VOLTAGE NORMALLY CLOSED TYPE 1-CH, 2-CH OPTICAL COUPLED MOSFET 6引脚DIP00击穿电压通常闭式1通道2通道光学耦合MOSFET
6 AND 8 PIN DIP 400 V BREAKDOWN VOLTAGE NORMALLY CLOSED TYPE 1-CH 2-CH OPTICAL COUPLED MOSFET
|
California Eastern Laboratories, Inc.
NEC Corp.
NEC[NEC]
California Eastern Labs
|
| S8050 |
Collector-base breakdown voltage
|
TY Semiconductor Co., Ltd
|
| SMTPB240 |
TELECOMMUNICATION PROTECTION BREAKDOWN VOLTAGE: 62 --- 270 V
|
Galaxy Semi-Conductor H...
|
| 2SD814 2SD814A 2SD0814 |
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)
|
PANASONIC[Panasonic Semiconductor]
|
| 93C56 93C56AEP 93C56AESN 93C56BESN 93C56BEP |
2K 5.0V Automotive Temperature Microwire Serial EEPROM
2K 5.0V Automotive Temperature Microwire Serial EEPROM
Dissipation, Pd:22.2W; Package/Case:MiniDIP; C-E Breakdown Voltage:600V
IGBT Module; Continuous Collector Current, Ic:5A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:16.7W; C-E Breakdown Voltage:600V; Collector Current:5A; Collector Emitter Voltage, Vceo:600V RoHS Compliant: No
|
Microchip Technology Inc.
|
| BUY24 |
Collector-Emitter Breakdown Voltage-: V(BR)CEO= 60V(Min.)
|
Inchange Semiconductor ...
|
| PC450T11 |
Photocoupler with Built-in Breakdown Diode for Surge Voltage Absorption
|
SHARP[Sharp Electrionic Components]
|
| LVAS1A LVA100A LVA43A LVA47A |
SHARP BREAKDOWN, LOW LEAKAGE LVA REGULATOR DIODES
|
New Jersey Semi-Conduct...
|
